KTN2222A

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907/2907A. KTN2222/2222A Electrically Similar to 2N2222/2222A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL UNIT KTN2222 KTN2222A Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25 ) Junction Temperature VCBO VCEO VEBO IC PC Tj 60 75 30 40 56 600 625 150 V V V mA mW Storage Temperature Range Tstg -55 150 L M C KTN2222/A EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. BASE 3. COLLECTOR TO-92 2003. 6. 16 Revision No : 2 1/5 KTN2222/A ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current KTN2222A ICEX Collector Cut-off Current KTN2222 KTN2222A ICBO Emitter Cut-off Current KTN2222A IEBO Collector-Base Breakdown Voltage KTN2222 KTN2222A V(BR)CBO TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0 IC=10 A, IE=0 Collector-Emitter Breakdown Voltage * KTN2222 KTN2222A V(BR)CEO Emitter-Base Breakdown Voltage KTN2222 KTN2222A V(BR)EBO DC Current Gain KTN2222 KTN2222A * KTN2222 KTN2222A hFE(1) hFE(2) hFE(3) hFE(4) h...