SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10n...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. Complementary to the KTN2907/2907A. KTN2222/2222A Electrically Similar to 2N2222/2222A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2222 KTN2222A
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
VCBO VCEO VEBO
IC
PC
Tj
60 75 30 40 56
600
625
150
V V V mA
mW
Storage Temperature Range Tstg -55 150
L M
C
KTN2222/A
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
2003. 6. 16
Revision No : 2
1/5
KTN2222/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
KTN2222A
ICEX
Collector Cut-off Current
KTN2222 KTN2222A
ICBO
Emitter Cut-off Current
KTN2222A
IEBO
Collector-Base Breakdown Voltage
KTN2222 KTN2222A
V(BR)CBO
TEST CONDITION VCE=60V, VEB(OFF)=3V VCB=50V, IE=0 VCB=60V, IE=0 VEB=3V, IC=0
IC=10 A, IE=0
Collector-Emitter Breakdown Voltage
* KTN2222 KTN2222A
V(BR)CEO
Emitter-Base Breakdown Voltage
KTN2222 KTN2222A
V(BR)EBO
DC Current Gain
KTN2222 KTN2222A *
KTN2222 KTN2222A
hFE(1) hFE(2) hFE(3) hFE(4)
h...