SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. Complementary to the KTN2222/2222A. KTN2907/2907A Electrically Similar to 2N2907/2907A.
KTN2907/A
EPITAXIAL PLANAR
PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KTN2907 KTN2907A
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-40
-60
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current Collector Power Dissipation
(Ta=25 ) Junction Temperature
IC PC Tj
-600 mA 625 mW 150
Storage Temperature Range
Tstg
-55 150
1999. 4. 9
Revision No : 1
1/4
KTN2907/A
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector Cut-off Current
KTN2907 KTN2907A
ICEX ICBO
Collector-Base Breakdown Voltage *
Collector-Emitter Breakdown Voltage
KTN2907 KTN2907A
V(BR)CBO V(BR)CEO
Emitter-Base Breakdown Voltage KTN2907 KTN2907A
V(BR)EBO hFE(1)
KTN2907 KTN2907A
hFE(2)
DC Current Gain
KTN2907 *
KTN2907A
hFE(3)
KTN2907 KTN2907A
hFE(4) *
KTN2907 KTN2907A
hFE(5) *
Collector-Emitter Saturation Voltage *
VCE(sat)1 VCE(sat)2
Base-Emitter Saturation Voltage
VBE(sat)1 *
VBE(sat)2
Transition Frequency
fT
Collector Output Capacitance
Cob
Input Capacitance
Cib
Turn-On Time
ton
Delay Time
td
Switching Time
Rise Time Turn-Off Time
tr toff
Storage Time
tstg
...