PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING N-CHANNEL POWER M...
PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT
TRANSISTOR
NP80N06CLD,NP80N06DLD,NP80N06ELD
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION This product is N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES Channel Temperature 175 degree rated Super Low On-state Resistance
RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) Low Ciss : Ciss = 2360 pF (TYP.) Built-in Gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N06CLD
TO-220AB
NP80N06DLD
TO-262
NP80N06ELD
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
Gate to Source Voltage
VGSS
±20
Drain Current (DC) Drain Current (Pulse) Note1
ID(DC) ID(pulse)
±80 ±210
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (Tch = 25 °C)
PT
100
Single Avalanche Current Single Avalanche Energy Note2
IAS TBD EAS TBD
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V V A A W W A mJ °C °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V →0
THERMAL RESISTANCE Channel to Case Channel to Ambient
Rth(ch-C) 1.50 °C/W Rth(ch-A) 83.3 °C/W
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this devic...