UPA2743T1A

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2743T1A SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The μ PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 4.6 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Built-in gate protection diode Thin type surface mount package with heat spreader (8-pin HVSON (6051)) RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) VDSS 30 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) Drain Current (pulse) Note1 Total Power Dissipation Note2 Total Power Dissipation (PW = 10 sec) Note2 ID(DC) ID(pulse) PT1 PT2 ±29 ±170 1.5 4.6 A A W W Channel Temperature Tch 150 °C Storage Temperature Single Avalanche Current Note3 Single Avalanche Energy Note3 Tstg −55 to +150 °C IAS 29 A EAS 84.1 mJ 0.42 +0.1 −0.05 1.27 0.10 M PACKAGE DRAWING (Unit: mm) 1 2 3 4 8 7 6 5 6 ±0.2 5.4 ±0.2 5 ±0.2 5.15 ±0.2 0.10 S 4.1 ±0.2 0.27 ±0.05 1.0 MAX. +0.05 −0 0 1 0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 3.65 ±0.2 0.6 ±0.15 0.7 ±0.15 EQUIVALENT CIRCUIT Drain THERMAL RESISTANCE Channel to Ambient Thermal Resistance Note2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 1.5 °C/W °C/W Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0...