DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2793AGR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2793AGR...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
μ PA2793AGR
SWITCHING N- AND P-CHANNEL POWER MOS FET
DESCRIPTION The μ PA2793AGR is N- and P-channel MOS Field Effect
Transistors designed for Motor Drive application.
FEATURES
Low on-state resistance N-channel RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) P-channel RDS(on)1 = 26 mΩ MAX. (VGS = −10 V, ID = −3.5 A) RDS(on)2 = 36 mΩ MAX. (VGS = −4.5 V, ID = −3.5 A)
Low input capacitance N-channel Ciss = 2200 pF TYP. P-channel Ciss = 2200 pF TYP.
Built-in gate protection diode Small and surface mount package (Power SOP8)
1.8 MAX.
1.44
0.05 MIN.
PACKAGE DRAWING (Unit: mm)
85
14 5.37 MAX.
N-channel 1 : Source 1 2 : Gate 1 7, 8: Drain 1
P-channel 3 : Source 2 4 : Gate 2 5, 6: Drain 2
6.0 ±0.3 4.4
0.8
+0.10 –0.05
0.15
1.27 0.78 MAX.
0.40
+0.10 –0.05
0.12 M
0.5 ±0.2
0.10
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
μ PA2793AGR-E1-AT Note μ PA2793AGR-E2-AT Note
Pure Sn
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
PACKAGE Power SOP8
EQUIVALENT CIRCUITS
N-channel
P-channel
Drain
Drain
Gate
Body Diode
Gate
Body Diode
Gate Protection Diode
Source
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceedin...
