MSF11N70

MSF11N70 N-Channel 700V MOSFET Description The MSF11N70 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package available Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current @ TC=25°C ID Continuous Drain Current @ TC=100°C IDM Pulsed Drain Current IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt Value 700 ±30 1.1 6.5 40 10 658 17.8 4.5 Unit V V A A A A mJ mJ V/ns Publication Order Number: [MSF11N70] © Bruckewell Technology Corporation Rev. A -2014 MSF11N70 N-Channel 700V MOSFET Absolute Maximum Ratings Symbol Parameter Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) TSTG Operating and Storage Temperature Range NOTE: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, IAS =9.0A, VDD = 50V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ...