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MSE20N06N Dataheets PDF



Part Number MSE20N06N
Manufacturers Bruckewell
Logo Bruckewell
Description Dual N-Channel 20-V (D-S) MOSFET
Datasheet MSE20N06N DatasheetMSE20N06N Datasheet (PDF)

MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: •Battery Powered Instruments •Portable Computing •Mobile Phones •GPS Units and Media Players Bruckewell Technology Corp., Ltd. Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Electrical Characteristics Bruckewell Technology Corp., Ltd. Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b.

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MSE20N06N Dual N-Channel 20-V (D-S) MOSFET FEATURES • Low RDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: •Battery Powered Instruments •Portable Computing •Mobile Phones •GPS Units and Media Players Bruckewell Technology Corp., Ltd. Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Electrical Characteristics Bruckewell Technology Corp., Ltd. Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. • Characteristic Curves Bruckewell Technology Corp., Ltd. .


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