N-Channel 60-V (D-S) MOSFET
MS90N06
N-Channel 60-V (D-S) MOSFET
Features • Low rDS(on) trench technology • Fast switching speed • Low thermal impeda...
Description
MS90N06
N-Channel 60-V (D-S) MOSFET
Features Low rDS(on) trench technology Fast switching speed Low thermal impedance RoHS compliant package Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [MS90N06]
© Bruckewell Technology Corporation Rev. A -2014
MS90N06
N-Channel 60-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C) IDM Pulsed Drain Currenta IS Continuous Source Current (Diode Conduction)a PD Power Dissipationa (TA =25°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value 60 ±20 90 360 90 300
-55 to +175
Unit V V A A A W °C
Thermal Resistance Ratings
Symbol
Parameter
RθJA Maximum Junction-to-Ambienta
RθJC Maximum Junction-to-Case
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum 62.5 1
Units °C/W
Static Symbol
VGS
Parameter Gate Threshold Voltage
Test Conditions VDS = VGS, ID =-250μA
Min Typ. Max. Units 1V
IGSS Gate-Body Leakage
VDS = 0 V , VGS = ±20 V
±100 nA
IDSS ID(on)
Zero Gate Voltage Drain Current On-State Drain Current
VDS = 48 V , VGS = 0 V VDS = 48 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V
120
1 uA 25
A
RDS(on) gfs
Drain-Source On-Resistance Forward Tranco...
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