MS90N06

MS90N06 N-Channel 60-V (D-S) MOSFET Features Low rDS(on) trench technology Fast switching speed Low thermal impedance RoHS compliant package Applications: Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS90N06] © Bruckewell Technology Corporation Rev. A -2014 MS90N06 N-Channel 60-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) IDM Pulsed Drain Currenta IS Continuous Source Current (Diode Conduction)a PD Power Dissipationa (TA =25°C) TJ/TSTG Operating Junction and Storage Temperature Value 60 ±20 90 360 90 300 -55 to +175 Unit V V A A A W °C Thermal Resistance Ratings Symbol Parameter RθJA Maximum Junction-to-Ambienta RθJC Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum 62.5 1 Units °C/W Static Symbol VGS Parameter Gate Threshold Voltage Test Conditions VDS = VGS, ID =-250μA Min Typ. Max. Units 1V IGSS Gate-Body Leakage VDS = 0 V , VGS = ±20 V ±100 nA IDSS ID(on) Zero Gate Voltage Drain Current On-State Drain Current VDS = 48 V , VGS = 0 V VDS = 48 V , VGS = 0 V , TJ= 55°C VDS = 5 V, VGS = 10 V 120 1 uA 25 A RDS(on) gfs Drain-Source On-Resistance Forward Tranco...