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MS75N075 Dataheets PDF



Part Number MS75N075
Manufacturers Bruckewell
Logo Bruckewell
Description 75V N-Channel MOSFET
Datasheet MS75N075 DatasheetMS75N075 Datasheet (PDF)

MS75N75 75V N-Channel MOSFET Features • RDS(on) (Max 0.017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage Drain Current -Continuous (TC=25°C) ID.

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MS75N75 75V N-Channel MOSFET Features • RDS(on) (Max 0.017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current –Pulsed VGS Gate-Source Voltage EAS Single Pulsed Avalanche Energy EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD Power Dissipation (TC=25°C) - Derate above 25°C TJ/TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds ●Drain current limited by maximum junction temperature Value 75 75 52.5 300 ±20 1350 9 7.0 190 1.27 -55 to +150 300 Unit V A A A V mJ mJ V/ns W W/°C °C °C Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Thermal Resistance Characteristics Symbol Parameter RθJC Junction-to-Case RθJA Junction-to-Ambient Typ. --- Max. 1.43 62.5 Units °C/W On Characteristics Symbol Parameter VGS Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance Test Conditions VDS = VGS,ID = 250μA VGS = 10 V,ID = 3.75 A Min Typ. Max. Units 2.0 -- 4.0 V -- 0.014 0.017 Ω Off Characteristics Symbol Parameter BVDSS △BVDSS /△TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain IDSS Current IGSSF Gate-Body Leakage Current,Forward IGSSR Gate-Body Leakage Current,Reverse Test Conditions VGS = 0 V , ID = 250μA ID = 250μA, Referenced to 25°C VDS = 75 V , VGS = 0 V VDS = 60 V , VC = 125°C VGS = 20 V , VDS = 0 V VGS = -20 V , VDS = 0 V Min 75 ----- Typ. -- 0.08 ---- Max. -- Units V -- V/°C 10 μA 100 100 μA -100 nA Dynamic Characteristics Symbol Parameter CISS Input Capacitance COSS Coss Output Capacitance CRSS Crss Reverse Transfer Capacitance Test Conditions VDS = 25 V, VGS = 0 V, f = 1.0MHz Min Typ. Max. Units -- 3000 -- pF -- 1100 -- pF -- 250 -- pF Switching Characteristics Symbol Parameter td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDS = 37.5 V, ID = 75 A, RG = 25 Ω VDS = 60 V,ID = 10 A, VGS = 75 V Min Typ. Max. Units -- 25 60 ns -- 300 700 ns -- 150 310 ns -- 180 370 ns -- 85 110 nC -- 15 -- nC -- 40 -- nC Publication Order Number: [MS75N75] © Bruckewell Technology Corporation Rev. A -2014 MS75N75 75V N-Channel MOSFET Source-Drain Diode Maximum Ratings and Characteristics Symbol Parameter Test Conditions IS Continuous Source-Drain Diode Forward Current ISM ISM Pulsed Source-Drain Diode Forward Current VSD Source-Dra.


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