Document
MS75N75
75V N-Channel MOSFET
Features • RDS(on) (Max 0.017 Ω )@VGS=10V • Gate Charge (Typical 85nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (175°C) • RoHS compliant package
Packing & Order Information 50/Tube ; 1,000/Box
Graphic symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDSS
Drain-Source Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Drain Current –Pulsed
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC=25°C) - Derate above 25°C
TJ/TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds
●Drain current limited by maximum junction temperature
Value 75 75 52.5 300 ±20
1350 9 7.0
190 1.27 -55 to +150
300
Unit V A A A V mJ mJ
V/ns W
W/°C °C
°C
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Thermal Resistance Characteristics
Symbol
Parameter
RθJC Junction-to-Case
RθJA Junction-to-Ambient
Typ. ---
Max. 1.43 62.5
Units °C/W
On Characteristics Symbol Parameter
VGS Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions VDS = VGS,ID = 250μA
VGS = 10 V,ID = 3.75 A
Min Typ. Max. Units 2.0 -- 4.0 V -- 0.014 0.017 Ω
Off Characteristics Symbol Parameter
BVDSS
△BVDSS /△TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain IDSS
Current
IGSSF
Gate-Body Leakage Current,Forward
IGSSR
Gate-Body Leakage Current,Reverse
Test Conditions VGS = 0 V , ID = 250μA
ID = 250μA, Referenced to 25°C VDS = 75 V , VGS = 0 V VDS = 60 V , VC = 125°C VGS = 20 V , VDS = 0 V
VGS = -20 V , VDS = 0 V
Min 75 -----
Typ. --
0.08 ----
Max. --
Units V
-- V/°C
10 μA 100 100 μA
-100
nA
Dynamic Characteristics Symbol Parameter
CISS Input Capacitance
COSS
Coss Output Capacitance
CRSS
Crss Reverse Transfer Capacitance
Test Conditions
VDS = 25 V, VGS = 0 V, f = 1.0MHz
Min Typ. Max. Units -- 3000 -- pF -- 1100 -- pF -- 250 -- pF
Switching Characteristics Symbol Parameter
td(on)
Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 37.5 V, ID = 75 A, RG = 25 Ω
VDS = 60 V,ID = 10 A, VGS = 75 V
Min Typ. Max. Units -- 25 60 ns -- 300 700 ns -- 150 310 ns -- 180 370 ns -- 85 110 nC -- 15 -- nC -- 40 -- nC
Publication Order Number: [MS75N75]
© Bruckewell Technology Corporation Rev. A -2014
MS75N75
75V N-Channel MOSFET
Source-Drain Diode Maximum Ratings and Characteristics
Symbol Parameter
Test Conditions
IS Continuous Source-Drain Diode Forward Current
ISM ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Dra.