MS67C10
N & P Channel 60-V Dual MOSFETs
Description These N+P dual Channel enhancement mode power field effect transisto...
MS67C10
N & P Channel 60-V Dual MOSFETs
Description These N+P dual Channel enhancement mode power field effect
transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features Fast switching Green Device Available Suit for 4.5V Gate Drive Applications Applications DC Fan Motor Drive Applications Networking Half / Full Bridge Topology Packing & Order Information 3,000/Reel
SO-8 Package information
Graphic symbol
Publication Order Number: [MS67C10]
© Bruckewell Technology Corporation Rev. A -2014
MS67C10
N & P Channel 60-V Dual MOSFETs
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
Rating
VDS Drain-Source Voltage
60 -60
VGS Gate-Source Voltage
±20 ±20
ID Drain Current - Continuous (TC =25°C) Drain Current - Continuous (TC =70°C)
IDM Drain Current - Pulsed1
4.5 -3.5 2.85 -2.21 18 -14
Power Dissipation (TC =25°C) PD
Power Dissipation - Derate above 25°C
3.57 0.028
TJ TSTG
Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Unit V V A A A W
W/°C °C °C
Thermal Resistance Ratings
Symbol
Parameter
RθJA Thermal Resistance Junction to ambient
RθJC Thermal Resistance Juncti...