P-Channel MOSFET
P-Channel 20-V (D-S) MOSFET
MS34P07
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switc...
Description
P-Channel 20-V (D-S) MOSFET
MS34P07
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: Battery Powered Instruments Portable Computing Mobile Phones GPS Units and Media Players
VDS (V) -20
PRODUCT SUMMARY rDS(on) (mΩ)
34 @ VGS = -4.5V 48 @ VGS = -2.5V
ID(A) -5 -3
TSOP6
Drain: 1,2,5,6 Gate: 3 Source: 4
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a
TA=25°C TA=100°C
TA=25°C
ID
IDM IS PD
-5 -3.3 -20 -1 1.40
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
62.5 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
Electrical Characteristics
Parameter
Gate-Source Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance Diode Forward Voltage
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Symbol
Test Conditions
Static
VGS(th) IGSS
IDSS
ID(on)
rDS(o...
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