MS23P59

MS23P59 P-Channel -60-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed RoHS compliant package Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23P59] © Bruckewell Technology Corporation Rev. A -2014 MS23P59 P-Channel -60-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA =25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Value -60 ±20 -1.6 -1.2 -10 -1.6 1.3 0.8 -55 to +150 Unit V V A A A A W W °C Thermal Resistance Ratings Symbol Parameter Maximum Junction-to-Ambienta (t <= 10 sec) RθJA Maximum Junction-to-Ambienta (Steady-State) Notes: a. Surface Mounted on 1” x...