N&P-Channel MOSFET
MS15C37
N & P-Channel 30-V (D-S) MOSFET
Features • Low rDS(on) trench technology • Fast switching speed • Low thermal im...
Description
MS15C37
N & P-Channel 30-V (D-S) MOSFET
Features Low rDS(on) trench technology Fast switching speed Low thermal impedance RoHS compliant package Applications DC/DC Conversion Power Routing Motor Drives Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [MS15C37]
© Bruckewell Technology Corporation Rev. A -2014
MS15C37
N & P-Channel 30-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Nch Limit
Pch Limit
VDS Drain-Source Voltage
30 -30
VGS Gate-Source Voltage
±20 ±20
ID
Continuous Drain Currenta (TA =25°C) Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
1.5 1.25 10
IS
Continuous Source Current (Diode Conduction)a
0.36
Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C)
0.3 0.21
1.0 0.86 -10 -0.35 0.3 0.21
TJ/TSTG
Operating Junction and Storage Temperature
-55 to 150
Unit V V A A A A W W °C
Thermal Resistance Ratings
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 10 sec) Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes: a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Static Symbol VGS(th) IGSS IDSS ID(on)
RDS(on)
gfs VSD
Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA
Drain-Source On-ResistanceA
Forward TranconductanceA Diode Forward Voltage
Test Condi...
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