DatasheetsPDF.com

MS15C37

Bruckewell

N&P-Channel MOSFET

MS15C37 N & P-Channel 30-V (D-S) MOSFET Features • Low rDS(on) trench technology • Fast switching speed • Low thermal im...


Bruckewell

MS15C37

File Download Download MS15C37 Datasheet


Description
MS15C37 N & P-Channel 30-V (D-S) MOSFET Features Low rDS(on) trench technology Fast switching speed Low thermal impedance RoHS compliant package Applications DC/DC Conversion Power Routing Motor Drives Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS15C37] © Bruckewell Technology Corporation Rev. A -2014 MS15C37 N & P-Channel 30-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Nch Limit Pch Limit VDS Drain-Source Voltage 30 -30 VGS Gate-Source Voltage ±20 ±20 ID Continuous Drain Currenta (TA =25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb 1.5 1.25 10 IS Continuous Source Current (Diode Conduction)a 0.36 Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) 0.3 0.21 1.0 0.86 -10 -0.35 0.3 0.21 TJ/TSTG Operating Junction and Storage Temperature -55 to 150 Unit V V A A A A W W °C Thermal Resistance Ratings Symbol Parameter RTHJA Maximum Junction-to-Ambient C/Wa (t <= 10 sec) Maximum Junction-to-Ambient C/Wa (Steady-State) Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Static Symbol VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain CurrentA Drain-Source On-ResistanceA Forward TranconductanceA Diode Forward Voltage Test Condi...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)