PBSS9110D

PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS8110D. 1.2 Features „ Low collector-emitter saturation voltage VCEsat „ High collector current capability IC and ICM „ High collector current gain (hFE) at high IC „ High efficiency due to less heat generation „ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ High-voltage DC-to-DC conversion „ High-voltage MOSFET gate driving „ High-voltage motor control „ High-voltage power switches (e.g. motors, fans) „ Automotive applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current RCEsat collector-emitter saturation resistance [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. Conditions open base single pulse; tp ≤ 1 ms IC = −1 A; IB = −100 mA Min Typ Max Unit - - −100 V - - −1 A - - −3 A [1] - 170 320 mΩ NXP Semiconductors PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1, 2, 5, 6 3 4 Pinning Description collector base emitter Simplified outline Symbol 654 123 1, 2, 5, 6 3 4 sym030 3. Ordering information Table 3. Ordering information Type number Package Name Description PB...