PDTC144WMB

SOT883B PDTC144WMB NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA144WMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Tamb = 25 °C Min Typ Max Unit - - 50 V - - 100 mA 33 47 61 kΩ 0.37 0.47 0.57 NXP Semiconductors PDTC144WMB NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description I input (base) G GND (emitter) O output (collector) Simplified outline Graphic symbol 1 3 2 Transparent top view DFN1006B-3 (SOT883B) R1 1 3 R2 2 sym007 3. Ordering information Table 3. Ordering information Type number Package Name PDTC144WMB DFN1006B-3 Description Leadless ultra ...