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ARS50D Dataheets PDF



Part Number ARS50D
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description High Current Button Rectifiers
Datasheet ARS50D DatasheetARS50D Datasheet (PDF)

CREAT BY ART High Current Button Rectifiers FEATURES - Diffused junction - Low leakage - High surge capability - Low cost construction utilizing void-free molded plastic technique - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ARS50A thru ARS50M Taiwan Semiconductor MECHANICAL DATA Case: ARS Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound .

  ARS50D   ARS50D


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CREAT BY ART High Current Button Rectifiers FEATURES - Diffused junction - Low leakage - High surge capability - Low cost construction utilizing void-free molded plastic technique - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ARS50A thru ARS50M Taiwan Semiconductor MECHANICAL DATA Case: ARS Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Weight: 1.68 g (approximately) ARS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) PARAMETER ARS ARS ARS ARS ARS ARS SYMBOL 50A 50B 50D 50G 50J 50K Maximum repetitive peak reverse voltage Maximum RMS voltage VRRM VRMS 50 100 200 400 600 800 35 70 140 280 420 560 Maximum DC blocking voltage VDC 50 100 200 400 600 800 Maximum average forward rectified current IF(AV) 50 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 600 Maximum instantaneous forward voltage (Note 1) @ 50 A VF 1.1 Maximum reverse current @ Rated VR TJ=25 oC TJ=125 oC IR Typical reverse recovery time (Note 2) trr Typical junction capacitance (Note 3) Cj Typical Thermal Resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle RθJC TJ TSTG Note 2: Reverse Recovery Time Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 5 250 3 300 1 - 50 to +175 - 50 to +175 ARS 50M 1000 700 1000 UNIT V V V A A V μA μs pF OC/W OC OC Document Number: DS_D1409007 Version: D14 ARS50A thru ARS50M Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE SUFFIX ARS50x (Note 1) B0 G ARS Note 1: "x" defines voltage from 50V (ARS50A) to 1000V (ARS50M) PACKING 1,000 / Bulk packing EXAMPLE PREFERRED P/N PART NO. PACKING CODE ARS50M B0 ARS50M B0G ARS50M ARS50M B0 B0 PACKING CODE SUFFIX G DESCRIPTION Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) AVERAGE FORWARD CURRENT(A) FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE 60 RESISTIVE OR 50 INDUCTIVE LOAD 40 30 20 10 0 125 135 145 155 165 CASE TEMPERATURE(oC) 175 INSTANTANEOUS REVERSE CURRENT (μA) FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 TJ=125oC 10 1 0.1 0 TJ=25oC 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT(A) FIG. 3 MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 1000 8.3ms Single Half Sine Wave 100 10 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD CURRENT (A) FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 10 1 0.1 0 PULSE WIDTH-300μs 1% DUTY CYCLE 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) 1.2 1.4 Document Number: DS_D1409007 Version: D14 1000 FIG. 5 TYPICAL JUNCTION CAPACITANCE ARS50A thru ARS50M Taiwan Semiconductor JUNCTION CAPACITANCE (pF) 100 f=1.0MHz Vsig=50m Vp-p 10 1 10 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS ARS 100 DIM. A B C D Unit (mm) Min Max 5.50 5.70 8.30 8.90 6.00 6.40 4.20 4.70 Unit (inch) Min 0.217 Max 0.224 0.327 0.350 0.236 0.165 0.252 0.185 MARKING DIAGRAM P/N = G= YW = F= Specific Device Code Green Compound Date Code Factory Code Document Number: DS_D1409007 Version: D14 CREAT BY ART ARS50A thru ARS50M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1409007 Version: D14 .


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