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B0530WF

Taiwan Semiconductor

Low VF SMD Schottky Barrier Diode

Small Signal Product B0520LWF,B0530WF,B0540WF Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Surfa...


Taiwan Semiconductor

B0530WF

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Small Signal Product B0520LWF,B0530WF,B0540WF Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Surface device type mounting - Moisture sensitivity level 1 - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: Flat lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 8.85 ± 0.5 mg SOD-123F MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL B0520LWF B0530WF B0540WF Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100oC (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Lead) Thermal Resistance (Junction to Ambient) (Note 2) VRRM VR IO IFSM RθJL RθJA 20 30 40 20 30 40 500 5.5 150 118 340 206 Junction and Storage Temperature Range TJ , TSTG -65 to +125 -65 to +150 Notes: 1. Test Condition: 8.3ms single half sine-wave superimposed on rated load Notes: 2. Valid provided that electrodes are kept at ambient temperature UNIT V V mA A oC/W oC Forward Voltage Reverse Leakage Current PARAMETER IF= 0.1 A IF= 0.5 A IF= 1.0 A IF= 0.1 A , Ta = 100oC IF= 0.5 A , Ta = 100oC IF= 1.0 A , Ta = 100oC VR = 10V VR = 20V VR = 10V , Ta = 100oC VR = 20V , Ta = 100oC VR = 15V VR = 30V VR = 40V VR = 40V , Ta = 100oC SYMBOL VF IR B052...




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