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B5817WS Dataheets PDF



Part Number B5817WS
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Schottky Diode
Datasheet B5817WS DatasheetB5817WS Datasheet (PDF)

Small Signal Product B5817WS/B5818WS/B5819WS Taiwan Semiconductor SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead SOD-323 package - High temperature soldering guaranteed: 260°C/10s - Weight: 4.3mg (approximately) SOD-323 APPLICATION - General purpose rectification application MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise n.

  B5817WS   B5817WS



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Small Signal Product B5817WS/B5818WS/B5819WS Taiwan Semiconductor SOD-323 20~40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface mount device type - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead SOD-323 package - High temperature soldering guaranteed: 260°C/10s - Weight: 4.3mg (approximately) SOD-323 APPLICATION - General purpose rectification application MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE SYMBOL B5817WS B5818WS B5819WS Non-Peak Repetitive Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Currect Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RthjA TJ TSTG 20 30 40 20 30 40 20 30 40 20 30 40 14 21 28 1 9 1.5 250 400 125 - 55 to + 150 UNIT V V V V V A A A mW oC/W oC oC PARAMETER B5817WS Reverse Breakdown Voltage B5818WS B5819WS B5817WS Reverse Voltage Leakage CurrentB5818WS B5819WS B5817WS Forward Voltage B5818WS Diode Capacitance B5819WS TEST CONDITION at IR = 1 mA at VR = 20 V at VR = 30 V at VR = 40 V at IF = 1A at IF = 3A at IF = 1A at IF = 3A at IF = 1A at IF = 3A VR=4V, f=1.0MHz Document Number: DS_S1404015 SYMBOL V(BR) IR VF CD MIN 20 30 40 ---- -- MAX UNIT V 1 mA 0.45 0.75 0.55 0.875 0.6 0.9 120 V V V pF Version: A14 Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) Fig. 1 Typical Forward Characteristics B5817WS/B5818WS/B5819WS Taiwan Semiconductor Fig. 2 Typical Reverse Characteristics Fig. 3 Typical Capacitance vs. VR Fig. 4 Power Derating Curve Document Number: DS_S1404015 Version: A14 Small Signal Product B5817WS/B5818WS/B5819WS Taiwan Semiconductor ORDERING INFORMATION PART NO. MANUFACTURE CODE PACKING CODE GREEN COMPOUND CODE PACKAGE PACKING B5817WS RQ G SOD-323 3K / 7" Reel B5818WS (Note) RQ G SOD-323 3K / 7" Reel B5819WS RQ G SOD-323 3K / 7" Reel Note: Indicator of manufacturing site for manufacture special control, if empty means no special control requirement MARKING SJ SK SL EXAMPLE PREFERRED P/N PART NO. B5817WS RQG B5817WS B5817WS-M0 RQG B5817WS MANUFACTURE CODE M0 GREEN COMPOUND PACKING CODE CODE RQ G RQ G DESCRIPTION Green compound Green compound Document Number: DS_S1404015 Version: A14 Small Signal Product PACKAGE OUTLINE DIMENSIONS SOD-323 B5817WS/B5818WS/B5819WS Taiwan Semiconductor DIM. A B C D E F G H Unit (mm) Min Max 1.15 1.40 2.30 2.70 0.25 0.45 1.60 1.80 0.80 1.00 0.05 0.17 0.475 REF - 0.10 Unit (inch) Min Max 0.045 0.055 0.091 0.106 0.010 0.018 0.063 0.071 0.031 0.039 0.002 0.007 0.19 REF - 0.004 SUGGESTED PAD LAYOUT DIM. A B C D Unit (mm) Typ. 0.63 0.83 1.60 2.86 Unit (inch) Typ. 0.025 0.033 0.063 0.113 Document Number: DS_.


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