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B5819W

Taiwan Semiconductor

Schottky Diode

Small Signal Product B5817W/B5818W/B5819W Taiwan Semiconductor SOD-123 40V/1A Schottky Diode FEATURES - Low Forward V...


Taiwan Semiconductor

B5819W

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Small Signal Product B5817W/B5818W/B5819W Taiwan Semiconductor SOD-123 40V/1A Schottky Diode FEATURES - Low Forward Voltage Drop - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant MECHANICAL DATA - Case: Bend lead SOD-123 package - High temperature soldering guaranteed: 260°C/10s - Weight: 10mg (approximately) SOD-123 APPLICATION Low voltage, high frequency inverters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL B5817W VALUE B5818W B5819W Non-Peak Repetitive Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Currect Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM PD RthjA TJ TSTG 20 30 40 20 30 40 20 30 40 20 30 40 14 21 28 1 9 1.5 500 250 125 - 55 to + 150 UNIT V V V V V A A A mW oC/W oC oC PARAMETER B5817W Reverse Breakdown Voltage B5818W B5819W B5817W Reverse Voltage Leakage Current B5818W B5819W B5817W Forward Voltage B5818W Diode Capacitance B5819W Document Number: DS_S1404018 TEST CONDITION at IR = 1 mA at VR = 20 V at VR = 30 V at VR = 40 V at IF = 1A at IF = 3A at IF = 1A at IF = 3A at IF = 1A at IF = 3A VR=4V, f=1.0MHz SYMBOL V(BR) IR VF CD MIN 20 30 40 ---- -- MAX UNIT V 1 mA 0.45 0.75 0.55 0.8...




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