Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward V...
Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A
Schottky Diode
FEATURES
- Low Forward Voltage Drop - Surface Mounted Device - Moisture sensitivity level 1 - Pb free and RoHS compliant
MECHANICAL DATA
- Case: Bend lead SOD-123 package - High temperature soldering guaranteed: 260°C/10s - Weight: 10mg (approximately)
SOD-123
APPLICATION
Low voltage, high frequency inverters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
B5817W
VALUE B5818W
B5819W
Non-Peak Repetitive Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Currect Peak Forward Surge Current @t=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Resistance form Junction to Ambient Junction Temperature Storage Temperature Range
VRM VRRM VRWM
VR VR(RMS)
IO IFSM IFRM PD RthjA TJ TSTG
20 30 40 20 30 40 20 30 40 20 30 40 14 21 28
1 9 1.5 500 250 125 - 55 to + 150
UNIT
V V V V V A A A mW oC/W oC oC
PARAMETER
B5817W
Reverse Breakdown Voltage
B5818W
B5819W
B5817W
Reverse Voltage Leakage Current B5818W
B5819W
B5817W
Forward Voltage
B5818W
Diode Capacitance
B5819W
Document Number: DS_S1404018
TEST CONDITION
at IR = 1 mA
at VR = 20 V at VR = 30 V at VR = 40 V
at IF = 1A at IF = 3A at IF = 1A at IF = 3A at IF = 1A at IF = 3A VR=4V, f=1.0MHz
SYMBOL V(BR) IR
VF CD
MIN 20 30 40 ----
--
MAX
UNIT V
1 mA
0.45 0.75 0.55 0.8...