BAS40-06

Small Signal Product BAS40 / -04 / -05 / -06 Taiwan Semiconductor Low VF SMD Schottky Barrier Diode FEATURES - Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix "G" means green compound (halogen-free) MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008g (approximately) SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Power Dissipation PD 200 Repetitive Peak Reverse Voltage VRRM 40 Reverse Voltage VR 40 Repetitive Peak Forward Current IFRM 200 Mean Forward Current IO 200 Non-Repetitive Peak Forward Surge Current (Note 1) IFSM 0.6 Thermal Resistance (Junction to Ambient) (Note 2) RθJA 357 Junction and Storage Temperature Range TJ , TSTG -65 to +125 PARAMETER SYMBOL Reverse Breakdown Voltage IR=10μA V(BR) IF=1mA Forward Voltage IF=10mA VF IF=40mA Reverse Leakage Current VR=30V IR Junction Capacitance VR=1V, f=1.0MHz CJ Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA trr Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load Notes : 2. Valid provided that electrodes are kept at ambient temperature MIN 40 - MAX - 0.38 0.50 1.00 0.2 5.0 5.0 UNIT mW V V mA mA A o...