BAS70-04

Small Signal Product FEATURES 225mW SMD Switching Diode - Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection BAS70 / -04 / -05 / -06 Taiwan Semiconductor MECHANICAL DATA - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260oC/10s - Weight: 0.008grams (approximately) SOT-23 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VALUE Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air (Note 1) @ t ≦ 1.0 s (Note 1) (Note 1) VRRM VRWM VR VR(RMS) IF IFSM PD RθJA 70 49 70 100 200 625 Operating Junction Temperature Storage Temperature Range TJ TSTG -55 to + 125 -55 to + 150 PARAMETER Reverse breakdown voltage IR = 10 µA Forward voltage tp=300µs , IF=1.0mA tp＜300µs , IF=15mA Reverse leakage current tp＜300µs , VR=50V Junction capacitance VR = 0 V, f = 1 MHz Reverse revovery time IF = IR = 10 mA, IRR = 100 Ω, IRR = 1 mA Notes: 1. Valid provided that terminals are kept at ambient temperature 2. Test period ＜ 3000 µs SYMBOL V(BR) VF IR CJ trr MIN 70 - MAX 410 1000 100.00 2 5 UNIT V V mA mA mW K/W °C °C UNIT V mV nA pF ns Document Number: DS_S1404012 Version: E14 Small Signal Produ...