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1N753A

National Semiconductor

Half Watt Zeners

1N746A - 1N759A Series Discrete POWER & Signal Technologies N 1N746A - 1N759A Series Half Watt Zeners Absolute Maximum...


National Semiconductor

1N753A

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1N746A - 1N759A Series Discrete POWER & Signal Technologies N 1N746A - 1N759A Series Half Watt Zeners Absolute Maximum Ratings* Parameter Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above 25°C TA = 25°C unless otherwise noted Tolerance: A = 5% Value -65 to +200 + 175 + 230 500 3.33 Units °C °C °C mW mW/ °C * These ratings are limiting values above which the serviceability of the diode may be impaired. DO-35 NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Device 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N752A 1N753A 1N754A 1N755A 1N756A 1N757A 1N758A 1N759A TA = 25°C unless otherwise noted VZ (V) 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 12 (Ω) 28 24 23 22 19 17 11 7.0 5.0 6.0 8.0 10 17 30 ZZ @ IZT (mA) 20 20 20 20 20 20 20 20 20 20 20 20 20 20 (µ A) 10 10 10 2.0 2.0 1.0 1.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 IR1 @ VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 (µ A) 30 30 30 30 30 20 20 20 20 20 20 20 20 20 IR2 @ TA=150° C (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VR (%/° C) - 0.070 - 0.065 - 0.060 +/- 0.055 +/- 0.030 +/- 0.030 + 0.038 + 0.045 + 0.050 + 0.058 + 0.062 + 0.068 + 0.075 + 0.077 TC IZM* (mA) 110 100 95 85 75 70 ...




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