Document
Target Information
DFM500XXM65-TS000
Fast Recovery Dual Diode Module
DS6125-1 September 2013 (LN30989)
FEATURES
Low Reverse Recovery Charge High Switching Speed Low Forward Volt Drop Isolated AlSiC Base with AlN Substrates Dual Diodes can be paralleled for 1000A Rating Lead Free Construction 10.2kV Isolation Package
KEY PARAMETERS
VRRM VF IF IFM
(typ) (max) (max)
6500V 3.1V 500A 1000A
7(K) 5(K)
APPLICATIONS
Brake Chopper Diodes Boost and Buck Circuits Free-wheel Circuits Motor Drives Resonant Converters Induction Heating Multi-level Switch Inverters
The DFM500XXM65-TS000 is a dual 6500V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion.
Fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing PWM and high frequency switching.
The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DFM500XXM65-TS000
Note: When ordering, please use the complete part number
www.dynexsemi.com
6(A) 4(A) External connection required for a single 1000A diode
Fig. 1 Circuit configuration
Outline type code: X (See Fig. 7 for further information)
Fig. 2 Package
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DFM500XXM65-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF IFM I2t Pmax Visol QPD
Forward current (per arm) Max. forward current I2t value fuse current rating Max. power dissipation Isolation voltage – per module Partial discharge – per module
Test Conditions
Tj = 125°C Tj = 25°C Tj = -40°C DC, Tcase = 70°C, Tj = 125°C Tcase = 115°C, tp = 1ms VR = 0, tp = 10ms, Tj = 125°C Tcase = 25°C, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS
Max. Units
6500 V
6300 V
5800 V
500 A
1000 100
A kA2s
3300 W
10.2 kV
10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Comparative Tracking Index):
> 600
Symbol
Parameter
Rth(j-c) Rth(c-h)
Tj Tstg
Thermal resistance (per arm) Thermal resistance – case to heatsink (per module) Junction temperature
Storage temperature range
Screw Torque
Test Conditions Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease)
Mounting – M6 Electrical connections – M8
Min Typ. Max Units - - 30 °C/kW - - 8 °C/kW
-40 - 150 °C -40 - 150 °C
- - 5 Nm - - 10 Nm
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STATIC ELECTRICAL CHARACTERISTICS – PER ARM
Tcase = 25°C unless stated otherwise.
Symbol
Parameter
IRM Peak reverse current
VF Forward voltage
LM Inductance
Test Conditions VR = 6500V, Tj = 125°C
IF = 500A IF = 500A, Tj = 125°C
-
STATIC ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol LM RINT
Parameter Module inductance (externally connected in parallel)
Internal resistance (per arm)
Test Conditions -
DFM500XXM65-TS000
Min Typ Max Units 50 mA
3.1 V 3.5 V 40 nH
Min Typ Max Units 20 nH 370 μΩ
DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge
Irr Peak reverse recovery current Erec Reverse recovery energy
Test Conditions
IF = 500A VR = 3600V dIF/dt = 2000A/μs
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy
Test Conditions
IF = 500A VR = 3600V dIF/dt = 2000A/μs
Min Typ. Max Units 900 μC
450 A
1950
mJ
Min Typ. Max Units
1300
μC
560 A
2900
mJ
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DFM500XXM65-TS000
Fig. 3 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 DC current rating vs case temperature
Fig. 6 Reverse Bias Safe Operating Area (RBSOA)
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DFM500XXM65-TS000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
4 x M8
57 ±0.25
130±0.5
57 ±0.25
screwing depth max. 16
7
18 ±0.1
140 ±0.5 124 ±0.25
44 ±0.2
+1.5
48 -0.0 5 ±0.2
61.2 ±0.3 16.5 ±0.2
6 xØ7
Nominal Weight: 1100g
Module Outline Type Code: X Fig. 7 Module outline drawing
36.5±0.2
external connection
7(C)
5(C)
6(A) 4(A)
external connection
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DFM500XXM65-TS000
IMPORTANT INFORMATION:
This publication.