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DFM500XXM65-TS000 Dataheets PDF



Part Number DFM500XXM65-TS000
Manufacturers Dynex
Logo Dynex
Description Fast Recovery Dual Diode Module
Datasheet DFM500XXM65-TS000 DatasheetDFM500XXM65-TS000 Datasheet (PDF)

Target Information DFM500XXM65-TS000 Fast Recovery Dual Diode Module DS6125-1 September 2013 (LN30989) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 1000A Rating  Lead Free Construction  10.2kV Isolation Package KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 6500V 3.1V 500A 1000A 7(K) 5(K) APPLICATIONS  Brake Chopper Diodes  Boost and Buck Circuits  Free-wheel Circui.

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Target Information DFM500XXM65-TS000 Fast Recovery Dual Diode Module DS6125-1 September 2013 (LN30989) FEATURES  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 1000A Rating  Lead Free Construction  10.2kV Isolation Package KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 6500V 3.1V 500A 1000A 7(K) 5(K) APPLICATIONS  Brake Chopper Diodes  Boost and Buck Circuits  Free-wheel Circuits  Motor Drives  Resonant Converters  Induction Heating  Multi-level Switch Inverters The DFM500XXM65-TS000 is a dual 6500V, fast recovery diode (FRD) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. Fast switching times and low reverse recovery losses allow high frequency operation, making the device suitable for the latest drive designs employing PWM and high frequency switching. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DFM500XXM65-TS000 Note: When ordering, please use the complete part number www.dynexsemi.com 6(A) 4(A) External connection required for a single 1000A diode Fig. 1 Circuit configuration Outline type code: X (See Fig. 7 for further information) Fig. 2 Package 1/6 DFM500XXM65-TS000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol Parameter VRRM Repetitive peak reverse voltage IF IFM I2t Pmax Visol QPD Forward current (per arm) Max. forward current I2t value fuse current rating Max. power dissipation Isolation voltage – per module Partial discharge – per module Test Conditions Tj = 125°C Tj = 25°C Tj = -40°C DC, Tcase = 70°C, Tj = 125°C Tcase = 115°C, tp = 1ms VR = 0, tp = 10ms, Tj = 125°C Tcase = 25°C, Tj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287, V1 = 6900V, V2 = 5100V, 50Hz RMS Max. Units 6500 V 6300 V 5800 V 500 A 1000 100 A kA2s 3300 W 10.2 kV 10 pC THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 56mm Clearance: 26mm CTI (Comparative Tracking Index): > 600 Symbol Parameter Rth(j-c) Rth(c-h) Tj Tstg Thermal resistance (per arm) Thermal resistance – case to heatsink (per module) Junction temperature Storage temperature range Screw Torque Test Conditions Continuous dissipation – junction to case Mounting torque 5Nm (with mounting grease) Mounting – M6 Electrical connections – M8 Min Typ. Max Units - - 30 °C/kW - - 8 °C/kW -40 - 150 °C -40 - 150 °C - - 5 Nm - - 10 Nm 2/6 www.dynexsemi.com STATIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise. Symbol Parameter IRM Peak reverse current VF Forward voltage LM Inductance Test Conditions VR = 6500V, Tj = 125°C IF = 500A IF = 500A, Tj = 125°C - STATIC ELECTRICAL CHARACTERISTICS Tcase = 25°C unless stated otherwise. Symbol LM RINT Parameter Module inductance (externally connected in parallel) Internal resistance (per arm) Test Conditions - DFM500XXM65-TS000 Min Typ Max Units 50 mA 3.1 V 3.5 V 40 nH Min Typ Max Units 20 nH 370 μΩ DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM Tcase = 25°C unless stated otherwise Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 500A VR = 3600V dIF/dt = 2000A/μs Tcase = 125°C unless stated otherwise Symbol Parameter Qrr Reverse recovery charge Irr Peak reverse recovery current Erec Reverse recovery energy Test Conditions IF = 500A VR = 3600V dIF/dt = 2000A/μs Min Typ. Max Units 900 μC 450 A 1950 mJ Min Typ. Max Units 1300 μC 560 A 2900 mJ www.dynexsemi.com 3/6 DFM500XXM65-TS000 Fig. 3 Diode typical forward characteristics Fig. 4 Transient thermal impedance Fig. 5 DC current rating vs case temperature Fig. 6 Reverse Bias Safe Operating Area (RBSOA) 4/6 www.dynexsemi.com DFM500XXM65-TS000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 4 x M8 57 ±0.25 130±0.5 57 ±0.25 screwing depth max. 16 7 18 ±0.1 140 ±0.5 124 ±0.25 44 ±0.2 +1.5 48 -0.0 5 ±0.2 61.2 ±0.3 16.5 ±0.2 6 xØ7 Nominal Weight: 1100g Module Outline Type Code: X Fig. 7 Module outline drawing 36.5±0.2 external connection 7(C) 5(C) 6(A) 4(A) external connection www.dynexsemi.com 5/6 DFM500XXM65-TS000 IMPORTANT INFORMATION: This publication.


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