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D36NH02L Dataheets PDF



Part Number D36NH02L
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STD36NH02L
Datasheet D36NH02L DatasheetD36NH02L Datasheet (PDF)

www.DataSheet4U.com STD36NH02L N-channel 24V - 0.011Ω - 30A - DPAK STripFET™ III Power MOSFET General features Type STD36NH02L VDSS 24V RDS(on) <0.0145Ω ID 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced Description This series of products utilizes the last advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application .

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www.DataSheet4U.com STD36NH02L N-channel 24V - 0.011Ω - 30A - DPAK STripFET™ III Power MOSFET General features Type STD36NH02L VDSS 24V RDS(on) <0.0145Ω ID 30A (1) 1. Guaranteed when external Rg=4.7Ω and tf < tfmax ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced Description This series of products utilizes the last advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved. Applications ■ Switching application 3 1 TO-252 Internal schematic diagram Order codes Part number STD36NH02L Marking D36NH02L Package DPAK Packaging Tape & reel April 2006 Rev 1 1/13 www.st.com 13 Contents Contents STD36NH02L 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 STD36NH02L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Vspike (1) Drain-source voltage rating VDS Drain-Source Voltage (VGS = 0) VGS Gate-Source Voltage ID(2) Drain Current (continuous) at TC = 25°C ID IDM(3) Drain Current (continuous) at TC=100°C Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor EAS (4) Single pulse avalanche energy TJ Operating Junction Temperature Tstg Storage Temperature 1. Guaranteed when external Rg=4.7Ω and tf < tfmax 2. Value limited by wire bonding 3. Pulse width limited by safe operating area. 4. Starting Tj=25°C, ID=19A, VDD=18V Table 2. Thermal resistance Symbol Parameter Rthj-case Rthj-amb Tl Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Electrical ratings Value 30 24 ± 20 30 30 120 45 0.27 200 -55 to 175 Unit V V V A A A W W/°C mJ °C Value 3.33 100 275 Unit °C/W °C/W °C 3/13 Electrical characteristics 2 Electrical characteristics STD36NH02L (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test condictions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage drain current (VGS = 0) IGSS VGS(th) Gate body leakage current (VDS = 0) Gate Threshold Voltage RDS(on) Static Drain-Source On Resistance ID = 1mA, VGS= 0 VDS = 20V, VDS = 20V @125°C VGS = ±20V VDS= VGS, ID = 250µA VGS= 10V, ID= 15A VGS= 5V, ID= 15A Min. Typ. Max. Unit 24 V 1 µA 10 µA ±100 nA 1 1.8 2.5 V 0.011 0.0145 Ω 0.013 0.026 Ω Table 4. Dynamic Symbol Parameter Test condictions Min. gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output Capacitance Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge QOSS (2) Output charge RG Gate input resistance VDS =10V, ID = 15A VDS =15V, f=1 MHz, VGS=0 0.44V < VDD < 10V, ID = 30A, VGS =10V (see Figure 14) VDS=16V, VGS=0 f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Qoss = Coss*∆ VIN, Coss = Cgd+Cds Typ. 18 860 255 45 15.5 4.1 1.7 6 3 Max. Unit S pF pF pF 20 nC nC nC ns Ω 4/13 STD36NH02L Electrical characteristics Table 5. Switching times Symbol Parameter td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time Test condictions VDD=10V, ID= 15A, RG=4.7Ω, VGS=10V (see Figure 13) Min Typ. Max Unit 8 ns 70 ns 22 ns 15 ns Table 6. Source drain diode Symbol Parameter Test condictions Min Typ. Max Unit ISD Source-drain current ISDM(1) Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 15A, VGS = 0 trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 30A,di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 15) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 30 A 120 A 1.5 V 24 ns 16 nC 1.3 A 5/13 Electrical characteristics STD36NH02L 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13 STD36NH02L Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-dra.


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