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STD36NH02L
N-channel 24V - 0.011Ω - 30A - DPAK STripFET™ III Power MOSFET
General features
Type STD36NH02L
VDSS 24V
RDS(on) <0.0145Ω
ID 30A (1)
1. Guaranteed when external Rg=4.7Ω and tf < tfmax
■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced
Description
This series of products utilizes the last advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Applications
■ Switching application
3 1
TO-252
Internal schematic diagram
Order codes
Part number STD36NH02L
Marking D36NH02L
Package DPAK
Packaging Tape & reel
April 2006
Rev 1
1/13
www.st.com
13
Contents
Contents
STD36NH02L
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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STD36NH02L
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Vspike (1) Drain-source voltage rating
VDS Drain-Source Voltage (VGS = 0)
VGS Gate-Source Voltage ID(2) Drain Current (continuous) at TC = 25°C
ID IDM(3)
Drain Current (continuous) at TC=100°C Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
EAS (4) Single pulse avalanche energy
TJ Operating Junction Temperature Tstg Storage Temperature
1. Guaranteed when external Rg=4.7Ω and tf < tfmax 2. Value limited by wire bonding
3. Pulse width limited by safe operating area.
4. Starting Tj=25°C, ID=19A, VDD=18V
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case Rthj-amb
Tl
Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose
Electrical ratings
Value 30 24 ± 20 30 30 120 45 0.27 200
-55 to 175
Unit V V V A A A W
W/°C mJ
°C
Value 3.33 100 275
Unit °C/W °C/W
°C
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Electrical characteristics
2 Electrical characteristics
STD36NH02L
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test condictions
V(BR)DSS
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current (VGS = 0)
IGSS VGS(th)
Gate body leakage current (VDS = 0)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On Resistance
ID = 1mA, VGS= 0
VDS = 20V, VDS = 20V @125°C
VGS = ±20V
VDS= VGS, ID = 250µA VGS= 10V, ID= 15A VGS= 5V, ID= 15A
Min. Typ. Max. Unit
24 V
1 µA 10 µA
±100 nA
1 1.8 2.5 V 0.011 0.0145 Ω 0.013 0.026 Ω
Table 4. Dynamic
Symbol
Parameter
Test condictions
Min.
gfs (1) Forward transconductance
Ciss Coss Crss
Input capacitance Output Capacitance Reverse transfer capacitance
Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge
QOSS (2) Output charge
RG Gate input resistance
VDS =10V, ID = 15A
VDS =15V, f=1 MHz, VGS=0
0.44V < VDD < 10V, ID = 30A, VGS =10V (see Figure 14) VDS=16V, VGS=0 f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Qoss = Coss*∆ VIN, Coss = Cgd+Cds
Typ. 18
860 255 45
15.5 4.1 1.7 6
3
Max. Unit S
pF pF pF
20 nC nC nC ns
Ω
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STD36NH02L
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on) tr
td(off) tf
Turn-on delay time Rise time Turn-off delay time Fall time
Test condictions
VDD=10V, ID= 15A, RG=4.7Ω, VGS=10V (see Figure 13)
Min Typ. Max Unit
8 ns 70 ns 22 ns 15 ns
Table 6. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 15A, VGS = 0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 30A,di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 15)
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5%
30 A
120 A
1.5 V
24 ns 16 nC 1.3 A
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Electrical characteristics
STD36NH02L
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
Figure 2. Thermal impedance
Figure 3. Output characterisics
Figure 4. Transfer characteristics
Figure 5. Transconductance
Figure 6. Static drain-source on resistance
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STD36NH02L
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-dra.