VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules), 55 A to 110 A
MT-K
PRODUCT SUMMARY
IO VRRM Package Circuit
55 A to 110 A 800 V to 1600 V
MT-K Three phase bridge
FEATURES • Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage • UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES 5.MT...K
IO IFSM
TC 50 Hz 60 Hz
55 85 390 410
50 Hz I2t
60 Hz I2t
770 700 7700
VRRM TStg TJ
Range Range Range
VALUES 9.MT...K
90 85 950 1000 4525 4130 45 250 800 to 1600 -40 to 125 -40 to 125
VALUES 11.MT...K
110 85 1130 1180 6380 5830 63 800
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
VS-5.MT...K
VS-9.MT...K VS-11.MT...K
80 100 120 140 160 80 100 120 140 160
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE
V
800 1000 1200 1400 1600 800 1000 1200 1400 1600
VRSM, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE V
900 1100 1300 1500 1700 900 1100 1300 1500 1700
VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
UNITS A °C A A2s
A2s V °C °C
IRRM/IDRM, MAXIMUM AT TJ = 125 °C
mA
10
20
Revision: 27-Feb-14
1 Document Number: 94353
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output current at case temperature
IO
Maximum peak, one-cycle forward, non-repetitive on state surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum non-repetitve rate of rise of turned on current
Maximum holding current
Maximum latching current
I2t VT(TO)1 VT(TO)2
rt1 rt2 VTM dI/dt
IH IL
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms No voltage t = 8.3 ms reapplied
t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms
100 % VRRM reapplied
No voltage reapplied
Initial TJ = TJ max.
t = 10 ms 100 % VRRM t = 8.3 ms reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
(I > x IT(AV)), TJ maximum
VALUES 5.MT...K
55 85 390 410 330 345 770 700 540 500 7700
VALUES 9.MT...K
90 85 950 1000 800 840 4525 4130 3200 2920 45 250
VALUES 11.MT...K
110 85 1130 1180 950 1000 6380 5830 4510 4120 63 800
UNITS A °C A
A2s A2s
1.17 1.09 1.45 1.27
1.04 1.27
V
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
12.40
(I > x IT(AV)), TJ maximum
Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit
TJ = 25 °C, anode supply = 6 V, resistive load
11.04 2.68
4.10
3.59 1.65 150
200 400
3.93 m
3.37 1.57 V
A/μs
mA
BLOCKING
PARAMETER
SYMBOL
RMS isolation voltage Maximum critical rate of rise of off-state voltage
VISOL dV/dt (1)
TEST CONDITIONS
TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit
5.MT...K
Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90
9.MT...K 4000
500
11.MT...K UNITS V
V/μs
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
Maximum peak gate current Maximum peak negative gate voltage
PGM PG(AV)
IGM
- VGT
Maximum required DC gate voltage to trigger
VGT
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger Maximum gate current that will not trigger
IGT
VGD IGD
TEST CONDITIONS
TJ = TJ maximum
TJ = - 40 °C TJ = 25 °C TJ = 125 °C TJ = - 40 °C TJ = 25 °C TJ = 125 °C
Anode supply = 6 V, resistive load
TJ = TJ maximum, rated VDRM applied
5.MT...K
9.MT...K 10 2.5 2.5
11.MT...K UNITS W A
10
4.0 V 2.5 1.7 270 150 mA 80
0.25 V
6 mA
Revision: 27-Feb-14
2 Document Number: 94353
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE.