DatasheetsPDF.com

VS-52PF120 Dataheets PDF



Part Number VS-52PF120
Manufacturers Vishay
Logo Vishay
Description Three Phase Controlled Bridge
Datasheet VS-52PF120 DatasheetVS-52PF120 Datasheet (PDF)

VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors Three Phase Controlled Bridge (Power Modules), 55 A to 110 A MT-K PRODUCT SUMMARY IO VRRM Package Circuit 55 A to 110 A 800 V to 1600 V MT-K Three phase bridge FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 4000 VRMS isolating voltage • UL E78996 approved .

  VS-52PF120   VS-52PF120


Document
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors Three Phase Controlled Bridge (Power Modules), 55 A to 110 A MT-K PRODUCT SUMMARY IO VRRM Package Circuit 55 A to 110 A 800 V to 1600 V MT-K Three phase bridge FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 4000 VRMS isolating voltage • UL E78996 approved • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES 5.MT...K IO IFSM TC 50 Hz 60 Hz 55 85 390 410 50 Hz I2t 60 Hz I2t 770 700 7700 VRRM TStg TJ Range Range Range VALUES 9.MT...K 90 85 950 1000 4525 4130 45 250 800 to 1600 -40 to 125 -40 to 125 VALUES 11.MT...K 110 85 1130 1180 6380 5830 63 800 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VS-5.MT...K VS-9.MT...K VS-11.MT...K 80 100 120 140 160 80 100 120 140 160 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 900 1100 1300 1500 1700 900 1100 1300 1500 1700 VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 UNITS A °C A A2s A2s V °C °C IRRM/IDRM, MAXIMUM AT TJ = 125 °C mA 10 20 Revision: 27-Feb-14 1 Document Number: 94353 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO Maximum peak, one-cycle  forward, non-repetitive on state surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum non-repetitve rate of rise of turned on current Maximum holding current Maximum latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM dI/dt IH IL TEST CONDITIONS 120° rect. conduction angle t = 10 ms No voltage t = 8.3 ms reapplied t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 100 % VRRM reapplied No voltage reapplied Initial TJ = TJ max. t = 10 ms 100 % VRRM t = 8.3 ms reapplied t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum (I >  x IT(AV)), TJ maximum VALUES 5.MT...K 55 85 390 410 330 345 770 700 540 500 7700 VALUES 9.MT...K 90 85 950 1000 800 840 4525 4130 3200 2920 45 250 VALUES 11.MT...K 110 85 1130 1180 950 1000 6380 5830 4510 4120 63 800 UNITS A °C A A2s A2s 1.17 1.09 1.45 1.27 1.04 1.27 V (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ maximum 12.40 (I >  x IT(AV)), TJ maximum Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction TJ = 25 °C, from 0.67 VDRM, ITM =  x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load,  gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load 11.04 2.68 4.10 3.59 1.65 150 200 400 3.93 m 3.37 1.57 V A/μs mA BLOCKING PARAMETER SYMBOL RMS isolation voltage Maximum critical rate of rise of off-state voltage VISOL dV/dt (1) TEST CONDITIONS TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s TJ = TJ maximum, linear to 0.67 VDRM,  gate open circuit 5.MT...K Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90 9.MT...K 4000 500 11.MT...K UNITS V V/μs TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage PGM PG(AV) IGM - VGT Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current  that will not trigger IGT VGD IGD TEST CONDITIONS TJ = TJ maximum TJ = - 40 °C TJ = 25 °C TJ = 125 °C TJ = - 40 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V, resistive load TJ = TJ maximum, rated VDRM applied 5.MT...K 9.MT...K 10 2.5 2.5 11.MT...K UNITS W A 10 4.0 V 2.5 1.7 270 150 mA 80 0.25 V 6 mA Revision: 27-Feb-14 2 Document Number: 94353 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE.


VS-52MT140KPBF VS-52PF120 VS-53MT120KPBF


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)