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1N4148W-G

Taiwan Semiconductor

High Speed SMD Switching Diode

Small Signal Product High Speed SMD Switching Diode 1N4148W-G Taiwan Semiconductor FEATURES - Fast switching device (...


Taiwan Semiconductor

1N4148W-G

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Description
Small Signal Product High Speed SMD Switching Diode 1N4148W-G Taiwan Semiconductor FEATURES - Fast switching device (trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s - Polarity: Indicated by cathode band - Weight: 10 ± 0.5 mg - Marking Code: T4 SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER Power dissipation DC blocking voltage Repetitive peak reverse voltage Work peak reverse voltage RMS reverse voltage Repetitive peak forward current Mean forward current SYMBOL PD VR VRRM VRWM VR(RMS) IFRM IO VALUE 350 100 100 100 70 300 150 Non-repetitive peak forward surge current @ t=1 ms @ t=10 ms IFSM 2.0 1.0 Thermal resistance (Junction to Ambient) (Note 1) Junction and storage temperature range RθJA TJ , TSTG 357 -65 to + 150 PARAMETER SYMBOL Forward voltage IF=1.0mA IF=10mA IF=50mA VF IF=150mA VR=20V Reverse leakage current VR=75V VR=25V, Tj=150°C IR VR=75V, Tj=150°C Junction capacitance VR=0, f=1.0MHz CJ Reverse recovery time (Note 2) trr Notes : 1. Valid provided that terminals are kept at amb...




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