Glass Passivated Fast Recovery Rectifiers
1N4933G – 1N4937G
Taiwan Semiconductor
1A, 50V - 600V Fast Recovery Rectifier
FEATURES
● AEC-Q101 qualified available ...
Description
1N4933G – 1N4937G
Taiwan Semiconductor
1A, 50V - 600V Fast Recovery Rectifier
FEATURES
● AEC-Q101 qualified available ● High efficiency, Low VF ● High current capability ● High reliability ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● General purpose
KEY PARAMETERS
PARAMETER VALUE UNIT
IF
1
A
VRRM
50 - 600
V
IFSM
30
A
TJ MAX
150
°C
Package
DO-204AL (DO-41)
Configuration
Single die
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT
Marking code on the device
1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
Repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Reverse voltage, total rms value VR(RMS)
35
70
140
280
420
V
Forward current
IF
Surge peak forward current,
8.3ms single half sine wave
IFSM
superimposed on rated load
Junction temperature
TJ
1
A
30
A
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
1
Version: I2104
1N4933G – 1N4937G
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-ambient thermal resistance
SYMBOL RӨJA
TYP 65...
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