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1N4937G

Taiwan Semiconductor

Glass Passivated Fast Recovery Rectifiers

1N4933G – 1N4937G Taiwan Semiconductor 1A, 50V - 600V Fast Recovery Rectifier FEATURES ● AEC-Q101 qualified available ...


Taiwan Semiconductor

1N4937G

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Description
1N4933G – 1N4937G Taiwan Semiconductor 1A, 50V - 600V Fast Recovery Rectifier FEATURES ● AEC-Q101 qualified available ● High efficiency, Low VF ● High current capability ● High reliability ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● General purpose KEY PARAMETERS PARAMETER VALUE UNIT IF 1 A VRRM 50 - 600 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G UNIT Marking code on the device 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G Repetitive peak reverse voltage VRRM 50 100 200 400 600 V Reverse voltage, total rms value VR(RMS) 35 70 140 280 420 V Forward current IF Surge peak forward current, 8.3ms single half sine wave IFSM superimposed on rated load Junction temperature TJ 1 A 30 A -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: I2104 1N4933G – 1N4937G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 65...




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