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SF24G Dataheets PDF



Part Number SF24G
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Glass Passivated Super Fast Rectifiers
Datasheet SF24G DatasheetSF24G Datasheet (PDF)

SF21G – SF28G Taiwan Semiconductor 2A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 50 - 600 V IFSM 50 A TJ MAX 1.

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SF21G – SF28G Taiwan Semiconductor 2A, 50V - 600V Super Fast Rectifier FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF 2 A VRRM 50 - 600 V IFSM 50 A TJ MAX 150 °C Package DO-204AC (DO-15) Configuration Single die MECHANICAL DATA ● Case: DO-204AC (DO-15) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.400g (approximately) DO-204AC (DO-15) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SF SF SF SF SF SF SF SF SYMBOL 21G 22G 23F 24G 25G 26G 27G 28G UNIT Marking code on the device SF21G SF22G SF23F SF24G SF25G SF26G SF27G SF28G Repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Reverse voltage, total rms value VR(RMS) 35 70 105 140 210 280 350 420 V Forward current IF Surge peak forward current, 8.3ms single half sine wave superimposed IFSM on rated load 2 A 50 A Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: H2105 SF21G – SF28G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance Junction-to-case thermal resistance SYMBOL RӨJA RӨJC TYP 65 16 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL Forward voltage(1) SF21G SF22G SF23G SF24G SF25G IF = 2A, TJ = 25°C VF SF26G SF27G SF28G Reverse current @ rated VR(2) TJ = 25°C IR TJ = 125°C SF21G SF22G SF23G Junction capacitance SF24G SF25G 1MHz, VR = 4.0V CJ SF26G SF27G SF28G Reverse recovery time IF = 0.5A, IR = 1.0A, Irr = 0.25A trr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP 40 20 - MAX UNIT 0.95 V 1.30 V 1.70 V 5 µA 100 µA - pF - pF 35 ns ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE SF2xG DO-204AC (DO-15) SF2xG A0G DO-204AC (DO-15) SF2xGH DO-204AC (DO-15) SF2xGHA0G DO-204AC (DO-15) Notes: 1. "x" defines voltage from 50V (SF21G) to 600V (SF28G) 2. “H” means AEC-Q101 qualified PACKING 3,500 / Tape & Reel 1,500 / Ammo box 3,500 / Tape & Reel 1,500 / Ammo box 2 Version: H2105 SF21G – SF28G Taiwan Semiconductor (A ) CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 3 AVERAGE FORWARD CURRENT (A) 2 1 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 100 SF21G-SF24G 10 SF25G-SF28G f=1.0MHz Vsig=50mVp-p 1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Chara.


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