Document
HiPerFRED²
High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode
Part number
DPG20C400PN
1 23
DPG20C400PN
VRRM I FAV t rr
= 400 V = 2x 10 A = 45 ns
Backside: isolated
Features / Advantages:
● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces:
- Power dissipation within the diode - Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency switching devices
● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power
supplies (SMPS) ● Uninterruptible power supplies (UPS)
Package: TO-220FP
● Isolation Voltage: 2500 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Base plate: Plastic overmolded tab ● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PN
Fast Diode
Symbol VRSM VRRM IR
VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current
VR = 400 V
VR = 400 V
forward voltage drop
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
average forward current
TC = 125°C
rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ I RM
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 200 V f = 1 MHz
t rr reverse recovery time
IF = 10 A; VR = 270 V -diF/dt = 200 A/µs
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C
TVJ = 150°C
TVJ = 175°C
Ratings
min. typ. max. 400 400 1 0.15 1.32 1.51 1.03 1.24 10
Unit V V
µA mA
V V V V A
TVJ = 175°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 125 °C TVJ = 25 °C TVJ = 125 °C
0.50
12 4 6
45 65
0.77 V 19.8 mΩ
4.4 K/W K/W
35 W 150 A
pF
A A ns ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
DPG20C400PN
Package TO-220FP
Symbol Definition
I RMS TVJ T op Tstg Weight
RMS current virtual junction temperature operation temperature storage temperature
Conditions
per terminal
MD F
C
d Spp/App
d Spb/Apb
V ISOL
mounting torque
mounting force with clip
creepage distance on surface | striking distance through air
isolation voltage
t = 1 second t = 1 minute
terminal to terminal terminal to backside
50/60 Hz, RMS; IISOL ≤ 1 mA
Ratings
min. typ. max. 35
-55 175 -55 150 -55 150
2
0.4 0.6 20 60 1.6 1.0 2.5 2.5 2.