NDD162C

Naina Semiconductor Ltd. NDD162C Features Diode-Diode Module, 195 Amps Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage VRSM, Maximum nonrepetitive peak reverse voltage NDD160C 60 80 100 120 140 160 180 (V) 600 800 1000 1200 1400 1600 1800 (V) 700 900 1100 1300 1500 1700 1900 VDRM, Maximum repetitive peak off- state voltage (V) 600 800 1000 1200 1400 1600 1800 IRRM, Maximum reverse leakage current @ TJMAX (mA) 5 Electrical Characteristics (TA = 250C unless otherwise noted) Parameter Symbol Maximum average forward current @ TJ = 850C IF(AV) Maximum average RMS forward current IF(RMS) Maximum non-repetitive surge current Maximum I2t for fusing IFSM I2t Forward voltage drop VFM Isolation voltage VISO Values 195 306 6000 180000 1.5 3000 Units A A A A2s V V Thermal & Mechanical Specifications (TA = 250C unless otherwise noted) Parameter Symbol Operating junction temperature range TJ Storage temperature Thermal resistance, junction to case Tstg Rth(JC) Mounting torque to heatsink to terminals F Weight W Values -40 to +125 -40 to +125 0.18 5 ± 15% 5 ± 15% 200 Units 0C 0C 0C/W Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 sales@nainasemi.com www.nainasemi.com Naina Semico...