SB520-SB5100
SB520 - SB5100
Features
• Metal to silicon rectifier, majority
carrier conduction.
• For use in low volta...
SB520-SB5100
SB520 - SB5100
Features
Metal to silicon rectifier, majority
carrier conduction.
For use in low voltage, high
frequency inverters free wheeling, and polarity protection applications.
Low power loss, high efficiency. High current capability, low VF. High surge capacity. Glass passivated
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
520 530 540 550 560 580 5100
VRRM
Maximum Repetitive Reverse Voltage
20 30 40 50 60 80 100
V
IF(AV)
IFSM
Tstg TJ
Average Rectified Forward Current .375 " lead length @ TA = 75°C
Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
5.0
150 -50 to +150 -50 to +150
A
A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD RθJA
Parameter
Power Dissipation Thermal Resistance, Junction to Ambient
Value
5.0 25
Units
W °C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage @ 5.0 A
IR Reverse Current @ rated VR TA = 25°C TA = 100°C
CT Total Capacitance VR = 4.0 V, f = 1.0 MHz
Device
Units
520 530 540 550 560 580 5100
0.55 0.67 0.85 V
0.5 mA
50 25 mA
500 380 pF
2001 Fairchild Semiconductor Corporation
SB520 - SB5100, Rev. C
SB520-SB5100
Typical Characteristics
Schottky Rectifiers
(con...