Schottky Rectifiers. SB550 Datasheet

SB550 Rectifiers. Datasheet pdf. Equivalent


Part SB550
Description Schottky Rectifiers
Feature SB520-SB5100 SB520 - SB5100 Features • Metal to silicon rectifier, majority carrier conduction. • .
Manufacture Fairchild Semiconductor
Datasheet
Download SB550 Datasheet


www.DataSheet.co.kr BL GALAXY ELECTRICAL SCHOTTKY BARRIER R SB550 Datasheet
www.DataSheet.co.kr SB520 THRU SB5A0 SCHOTTKY BARRIER RECTI SB550 Datasheet
SIYU R DO-27 SB520 ...... SB5100 PLASTIC SCHOTTKY BARRIER SB550 Datasheet
Z ibo Seno Electronic Engineering Co., Ltd. SB520 – SB5200 SB550 Datasheet
SB520 thru SB560 Vishay General Semiconductor Schottky Barri SB550 Datasheet
SB520-SB5100 SB520 - SB5100 Features • Metal to silicon re SB550 Datasheet
SB520 thru SB5100 Schottky Barrier Rectifiers Reverse Voltag SB550 Datasheet
SB520 THRU SB5200 SCHOTTKY BARRIER RECTIFIER DO-201AD 0.21 SB550 Datasheet
Features Metal-semiconductor junction with guard ring Epitax SB550 Datasheet
SIYU R SB520 ...... SB5100 PLASTIC SCHOTTKY BARRIER RECTIF SB550 Datasheet
Recommendation Recommendation Datasheet SB550 Datasheet




SB550
SB520 - SB5100
Features
Metal to silicon rectifier, majority
carrier conduction.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
Glass passivated
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
520 530 540 550 560 580 5100
VRRM
Maximum Repetitive Reverse Voltage
20 30 40 50 60 80 100
V
IF(AV)
IFSM
Tstg
TJ
Average Rectified Forward Current
.375 " lead length @ TA = 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
5.0
150
-50 to +150
-50 to +150
A
A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
5.0
25
Units
W
°C/W
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage @ 5.0 A
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C
CT Total Capacitance
VR = 4.0 V, f = 1.0 MHz
Device
Units
520 530 540 550 560 580 5100
0.55 0.67 0.85 V
0.5 mA
50 25 mA
500 380 pF
2001 Fairchild Semiconductor Corporation
SB520 - SB5100, Rev. C



SB550
Typical Characteristics
Schottky Rectifiers
(continued)
5
4
SB520-SB540
3
SINGLE PHASE
HALF WAVE
2 60HZ
RESISTIVE OR
INDUCTIVE LOAD
1 .375" (9.00mm) LOAD
LENGTHS
SB550-SB5100
0
0 25 50 75 100 125 150 175
Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
150
120
90
60
30
0
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 2. Non-Repetitive Surge Current
40
SB520-SB540
10
SB580-SB5100
SB550-SB560
1
TA = 25ºC
Pulse Width = 300µS
2% Duty Cycle
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
20
10 SB520-SB540
SB550-SB5100
1
SB520-SB540
0.1
TA = 100ºC
TA = 75ºC
0.01
SB550-SB5100
TA = 25ºC
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
5000
2001 Fairchild Semiconductor Corporation
2000
1000
500
200
100
0.1
SB520-SB540
SB550-SB5100
1 10
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
100
SB520 - SB5100, Rev. C







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)