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LMUN5141T1G Dataheets PDF



Part Number LMUN5141T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Bias Resistor Transistor
Datasheet LMUN5141T1G DatasheetLMUN5141T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single LMUN5141T1G S-LMUN5141T1G device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter 3 resistor. The BRT eliminates these individual compone.

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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single LMUN5141T1G S-LMUN5141T1G device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter 3 resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications. 1 2 CASE 419, STYLE 3 SOT–323 (SC–70) • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–70/SOT–323 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering PIN 1 BASE (INPUT) R 1 R 2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) eliminating the possibility of damage to the die. • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMUN5141T1G S-LMUN5141T1G Marking 6U Shipping 3000/Tape&Reel MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Base Voltage VCBO 50 Collector-Emitter Voltage VCEO 50 Collector Current IC 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Symbol PD RθJA RθJL TJ, Tstg Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) –55 to +150 Unit mW °C/W °C/W °C/W °C Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LMUN5141T1G, S-LMUM5141T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VBE = 6.0 V) Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ICBO ICEO IEBO V(BR)CBO V(BR)CEO – – – 50 50 ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) Input Resistor Resistor Ratio hFE VCE(sat) VOL VOH R1 R1/R2 160 – – 4.9 70 – 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Typ Max Unit – 100 nAdc – 500 nAdc – 0.1 mAdc – – Vdc – – Vdc .


HD74LVU04A LMUN5141T1G S-LMUN5141T1G


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