Document
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
LMUN5141T1G S-LMUN5141T1G
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter
3
resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC–70/SOT–323 package which is designed for low power surface mount applications.
1
2 CASE 419, STYLE 3 SOT–323 (SC–70)
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
PIN 1 BASE (INPUT)
R 1
R 2
PIN 3 COLLECTOR
(OUTPUT)
PIN 2 EMITTER (GROUND)
eliminating the possibility of damage to the die.
• We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMUN5141T1G S-LMUN5141T1G
Marking 6U
Shipping 3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC 100
Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation TA = 25°C Derate above 25°C
Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature Range 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol PD
RθJA RθJL TJ, Tstg
Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) –55 to +150
Unit mW °C/W °C/W °C/W °C
Rev.O 1/4
LESHAN RADIO COMPANY, LTD. LMUN5141T1G, S-LMUM5141T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current (VBE = 6.0 V)
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ICBO ICEO IEBO
V(BR)CBO V(BR)CEO
– –
–
50 50
ON CHARACTERISTICS (Note 3) DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
Input Resistor
Resistor Ratio
hFE VCE(sat)
VOL VOH R1 R1/R2
160 – – 4.9 70 –
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Typ Max Unit
– 100 nAdc – 500 nAdc – 0.1 mAdc – – Vdc – – Vdc
.