UPG2009TB SPDT SWITCH Datasheet

UPG2009TB Datasheet, PDF, Equivalent


Part Number

UPG2009TB

Description

L-BAND HIGH POWER SPDT SWITCH

Manufacture

CEL

Total Page 10 Pages
Datasheet
Download UPG2009TB Datasheet


UPG2009TB
DATA SHEET
GaAs INTEGRATED CIRCUIT
μPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION
The μPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
L-band digital cellular or cordless telephone
BuletoothTM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
μPG2009TB-E3
Package
6-pin super minimold
Marking
G2U
Supplying Form
Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: μPG2009TB-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
The mark shows major revised points.

UPG2009TB
μPG2009TB
PIN CONNECTIONS
(Top View)
34
25
16
(Bottom View)
43
52
61
Pin No.
1
2
3
4
5
6
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Control Voltage 1, 2
Input Power
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
Vcont1, 2
Pin
Ptot
TA
Tstg
Ratings
6.0 to +6.0 Note
+36
0.15
45 to +85
55 to +150
Unit
V
dBm
W
°C
°C
Note Vcont1-Vcont2⏐ ≤ 6.0 V
RECOMMENDED OPERATING RENGE (TA = +25°C)
Parameter
Control Voltage (High)
Control Voltage (Low)
Symbol
Vcont(H)
Vcont(L)
MIN.
+2.7
0.2
TYP.
+2.8
0
MAX.
+3.0
+0.2
Unit
V
V
Pin Name
OUT1
GND
OUT2
Vcont2
IN
Vcont1
2 Data Sheet PG10191EJ02V0DS


Features NEC's L, S-BAND 4W SPDT SWITCH UPG2009T B FEATURES • LOW INSERTION LOSS: LIN S = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V , f = 1.0 GHz LINS = 0.30 dB TYP. @ Vco nt1/2 = 2.8 V/0 V, f = 2.0 GHz • HIGH ISOLATION: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz • POWER HAN DLING: Pin (0.1dB) = 34 dBm TYP. @ Vcon t1/2 = 2.8 V/0 V, f = 1.0 GHz Pin (1.0d B) = 36 dBm TYP. @ Vcont1/2 = 2.8 V/0 V , f = 1.0 GHz • 6-PIN SUPER MINIMOLD PACKAGE (2.0 × 1.25 × 0.9 mm) DESCRI PTION The UPG2009TB is a L, S-band SPDT (Single Pole Double Throw) GaAs FET sw itch for digital cellular or cordless t elephone application. The device can op erate from 500 MHz to 2.5 GHz, with low insertion loss and high isolation. APP LICATIONS • L-band digital cellular o r cordless telephone • BluetoothTM , W-LAN and WLL applications • Short Ra nge Wireless ORDERING INFORMATION Par t Number Package UPG2009TB-E3 6-pin s uper minimold Marking Supplying Form G2U • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the .
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