CGHV35060MP

PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz while the input matched transistor provides optimal gain, power and efficiency in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The typical performance plots in the datasheet are derived with CGHV35060MP matched into a 3.1-3.5GHz high power amplifier. PN: CGHV35060MP Typical Performance Over 3.1 - 3.5 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 3.1 GHz 3.3 GHz 3.5 GHz Units Gain 14.5 14.3 13.8 dB Output Power 88 88 75 W Drain Efficiency 61 67 64 % Note: Measured in the CGHV35060MP-TB amplifier circuit, under 100 μs pulse width, 10% duty cycle, PIN = 35 dBm. Features Reference design amplifier 3.1 - 3.5 GHz 75W Typical output power 14.5 dB power gain 67% Drain efficiency Internally pre-matched on input, unmatched output Rev 0 – April 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 CW Thermal Resistance, Junction to Case3 Pulsed Th...