CGHV40050

CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40050, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications up to 4 GHz. The reference HPA design in the datasheet operates from 800 MHz to 2 GHz operation instantaneously. It is a demonstration amplifier to showcase the CGHV40050’s high efficiency, high gain and wide bandwidth capabilities. The device can be used for a range of applications from narrow band UHF, L and S Band as PPNac: CkaGgHeVT4y0p0e5s0: F44&0C19G3H&V4404005200P6 well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package. Typical Performance Over 800 MHz - 2.5 GHz (TC = 25˚C), 50 V Parameter 800 MHz 1.2 GHz 1.4 GHz Small Signal Gain 17.6 16.9 17.7 Saturated Output Power 65 70 63 Drain Efficiency @ PSAT 63 63 Input Return Loss 5 5.5 Note: Measured CW in the CGHV40050F-AMPapplication circuit. 60 4.2 1.8 GHz 17.5 77 53 8 2.0 GHz 14.8 60 52 5 Features Up to 4 GHz Operation 77 W Typical Output Power 17.5 dB Small Signal Gain at 1.8 GHz Application Circuit for 0.8 - 2.0 GHz 53 % Efficiency at PSAT 50 V Operation Units dB W % dB Rev 1.0 - July 2015 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol D...