CGHV59350

PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218. Package Type: PN: 440217 CGHV59350 and 440218 Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 5.2 GHz 5.55 GHz 5.9 GHz Output Power 440 445 490 Gain 10.5 10.5 11 Drain Efficiency 59 54 Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm 55 Units W dB % Rev 0.0 - May 2015 - PRELIMINARY Features 5.2 - 5.9 GHz Operation 450 W Typical Output Power 10.5 dB Power Gain 55% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Pulse Width PW 100 µs Duty Cycle DC 10 % Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 64 24 245 40 Volts Volts ˚C ˚C mA A ˚C in-...