PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV...
PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications. The
transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN: 440217
CGHV59350 and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note: Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units W dB %
Rev 0.0 - May 2015 - PRELIMINARY
Features
5.2 - 5.9 GHz Operation 450 W Typical Output Power 10.5 dB Power Gain 55% Typical Drain Efficiency 50 Ohm Internally Matched <0.3 dB Pulsed Amplitude Droop
Subject to change without notice. www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Pulse Width
PW 100 µs
Duty Cycle
DC 10 %
Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque
VDSS VGS TSTG TJ IGMAX IDMAX TS
τ
125 -10, +2 -65, +150
225 64 24 245 40
Volts Volts
˚C ˚C mA A ˚C in-...