MPSA12 MPSA13 MPSA14
SILICON NPN DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S...
MPSA12 MPSA13 MPSA14
SILICON
NPN DARLINGTON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA12 series devices are silicon
NPN Darlington
transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCES VEBO IC PD TJ, Tstg JA
MPSA12 MPSA13 MPSA14 - 30 30 20 30 30 10 500 625 -65 to +150 200
ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=15V
ICBO
VCB=30V
ICES
VCE=15V
IEBO
VEB=10V
BVCES
IC=100μA
VCE(SAT) IC=10mA, IB=10μA
VCE(SAT) IC=100mA, IB=100μA
VBE(ON)
VCE=5.0V, IB=10mA
VBE(ON)
VCE=5.0V, IB=100mA
hFE VCE=5.0V, IC=10mA
hFE VCE=5.0V, IC=100mA
fT VCE=5.0V, IC=10mA, f=100MHz
MPSA12 MIN MAX
- 100 -- 100 - 100 20 - 1.0 -- 1.4 -20K ---
MPSA13 MIN MAX
-- 100 -- 100 30 -- 1.5 -- 2.0 5K 10K 125 -
MPSA14 MIN MAX
-- 100 -- 100 30 -- 1.5 -- 2.0 10K 20K 125 -
UNITS V V V mA
mW °C °C/W
UNITS nA nA nA nA V V V V V
MHz
R1 (18-March 2014)
MPSA12 MPSA13 MPSA14 SILICON
NPN DARLINGTON
TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (18-March 2014)
MPSA12 MPSA13 MPSA14
SILICON
NPN DARLINGT...