Bridge Rectifiers. UGF1004GD Datasheet

UGF1004GD Rectifiers. Datasheet pdf. Equivalent

Part UGF1004GD
Description 10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
Feature UGF1004GD thru UGF1008GD ® UGF1004GD thru UGF1008GD Pb Free Plating Product Pb 10 Ampere Insulat.
Manufacture Thinki Semiconductor
Datasheet
Download UGF1004GD Datasheet



UGF1004GD
UGF1004GD thru UGF1008GD
®
UGF1004GD thru UGF1008GD
Pb Free Plating Product
Pb
10 Ampere Insulated Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
Features
Latest GPP technology with ultra fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
ITO-220AB
Unit:mm
Mechanical Data
Case: Fully Insulated TO-220FP FullPak Plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Positive
Negative
Doubler
Series Connection
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "G"
Suffix "GA"
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL UGF1004GD UGF1005GD UGF1006GD UGF1007GD UGF1008GD UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 2)
IF= 5 A
Maximum reverse current @ rated VR TJ=25
TJ=125
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
Trr
RθJC
TJ
TSTG
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
200 300 400
140 210 280
200 300 400
10
70
0.95 1.25
20
- 55 to +175
- 55 to +175
10
100
6.0
500 600
350 420
500 600
1.70
25
- 55 to +150
- 55 to +150
V
V
V
A
A
V
μA
ns
oC/W
oC
oC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/



UGF1004GD
UGF1004GD thru UGF1008GD
®
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
12
10
8
6
4
2
0
0
FIG.1 FORWARD CURRENT DERATING CURVE
UGF1004GD-UGF1006GD
UGF1007GD-UGF1008GD
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
25 50 75 100 125 150 175
CASE TEMPERATURE (oC)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
TJ=125
1
0.1
0.01
0.001
0
TJ=25
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
40
20
0
1
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
100
TJ=125
10
TJ=25
1
0.1
0
UGF1004GD
UGF1005GD-UGF1006GD
UGF1007GD-UGF1008GD
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWARD VOLTAGE (V)
100
10
0.1
1 10
REVERSE VOLTAGE (V)
100
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com/





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