ACE2390M

ACE2390M N-Channel 150-V MOSFET Description ACE2390M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current b TA=25°C TA=70°C Continuous Source Current (Diode Conduction) a Power Dissipationa TA=25°C TA=70°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 150 ±20 1.1 0.9 5 1.6 1.3 0.8 -55 to 150 Unit V A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t<=10sec Steady State Symbol Maximum Unit RθJA 100 °C/W 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 Packaging Type ACE2390M N-Channel 150-V MOSFET Ordering information ACE2390M BM + H Halogen - free Pb - free BM : SOT-23-3 VER 1.1 2 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward...