Dual N-Channel Enhancement Mode Field Effect Transistor
Description
ACE2600B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected.
Features
VDS(V)=20V ID=6A (VGS=4.5V) RDS(ON)＜...
