ACE3401D

ACE3401D P-Channel Enhancement Mode Field Effect Transistor Description This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package Excellent thermal and electrical capabilities. Features  VDS(V)=-30V, ID=-3A  RDS(ON)<63mΩ @ VGS=-10V  Voltage controlled p-channel small signal switch  High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current TA=25 OC TA=70 OC VDSS -30 V VGSS ±12 V -3 ID A -2.4 Drain Current (Pulse) IDM -30 A Continuous Power Dissipation PD 500 mW Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L 3 12 SOT-23-3 1 2 3 Description Gate Source Drain Ordering information D GS ACE3401D XX + H Halogen - free Pb - free BM : SOT-23-3 VER 1.2 1 ACE3401D P-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse IDSS IGSSF IGSSR VDS=-30V, VGS=0V VGS=-20V VGS=20V -1 -100 100 uA nA nA On characteristics Static Drain-Source On-Resistance Gate Threshold Voltage VGS=-10V, ID=-4.2A RDS(ON) VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A VGS(th)...