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C2M0025120D Dataheets PDF



Part Number C2M0025120D
Manufacturers Cree
Logo Cree
Description Silicon Carbide Power MOSFET
Datasheet C2M0025120D DatasheetC2M0025120D Datasheet (PDF)

VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System .

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VDS 1200 V C2M0025120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C RDS(on) 63 A 25 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits TO-247-3 • Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drive • Pulsed Power Applications Part Number C2M0025120D Package TO-247-3 Marking C2M0025120 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage ID Continuous Drain Current ID(pulse) Pulsed Drain Current PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature 1200 -10/+25 -5/+20 63 39 250 378 -55 to +150 V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values VGS =20 V, TC = 25˚C A VGS =20 V, TC = 100˚C A Pulse width tP limited by Tjmax W TC=25˚C, TJ = 150 ˚C ˚C TL Solder Temperature Md Mounting Torque 260 ˚C 1.6mm (0.063”) from case for 10s 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): Die limits are 90A (25°C) and 60A (100°C) Note Fig. 19 Note 1 Fig. 22 Fig. 20 1 C2M0025120D Rev. 5, 04-2021 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage 1200 2.0 2.6 2.3 IDSS Zero Gate Voltage Drain Current 2 IGSS Gate-Source Leakage Current 25 RDS(on) Drain-Source On-State Resistance 41 gfs Transconductance 24.6 24 Ciss Input Capacitance 3140 Coss Output Capacitance 224 Crss Reverse Transfer Capacitance 9 Eoss Coss Stored Energy 128 EON Turn-On Switching Energy (Body Diode) 2.18 EOFF Turn Off Switching Energy (Body Diode) 0.68 EON Turn-On Switching Energy (External SiC Diode) 1.14 EOFF Turn Off Switching Energy (External SiC Diode) 0.8 td(on) Turn-On Delay Time 15 tr Rise Time 58 td(off) Turn-Off Delay Time 33 tf RG(int) Qgs Qgd Qg Fall Time Internal Gate Resistance Gate to Source Charge Gate to Drain Charge Total Gate Charge 17 1.0 46 71.5 194 Max. 4 100 250 34 Unit V V V μA nA mΩ S Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS, ID = 15mA VDS = VGS, ID = 15mA, TJ = 150 °C VDS = 1200 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 50 A VGS = 20 V, ID = 50 A, TJ = 150 °C VDS= 20 V, IDS= 50 A VDS= 20 V, IDS= 50 A, TJ = 150 °C VGS = 0 V pF VDS = 1000 V f = 1 MHz μJ VAC = 25 mV VDS = 800 V, VGS = -5/20 V, mJ ID = 50A, RG(ext) = 2.5Ω,L= 99 μH FWD = Internal Body Diode of MOSFET VDS = 800 V, VGS = -5/20 V, mJ ID = 50A, RG(ext) = 2.5Ω,L= 99 μH FWD = External SiC Diode VDD = 800 V, VGS = -5/20 V ID = 50 A, ns RG(ext) = 2.5 Ω, Inductive Load Timing relative to VDS Per IEC60747-8-4 pg 83 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS VDS = 800 V, VGS = -5/20 V nC ID = 50 A Per IEC60747-8-4 pg 21 Note Fig. 11 Fig. 4,5,6 Fig. 7 Fig. 17,18 Fig 16 Fig. 25 Fig. 25 Fig. 27 Fig. 12 2 C2M0025120D Rev. 5, 04-2021 Reverse Diode Characteristics Symbol Parameter Typ. Max. 4.1 VSD Diode Forward Voltage 3.5 IS Continuous Diode Forward Current 63 IS, pulse Diode Pulse Current 250 trr Reverse Recovery Time 33 Qrr Reverse Recovery Charge 487 Irrm Peak Reverse Recovery Current 24 trr Reverse Recovery Time 67 Qrr Reverse Recovery Charge 386 Irrm Peak Reverse Recovery Current 15 Note (2): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Unit Test Conditions Note V VGS = - 5 V, ISD = 25 A V VGS = - 5 V, ISD = 25 A, TJ = 150 °C VGS = - 5 V, TC= 25 °C Fig. 8, 9, 10 Note 2 VGS = - 5 V, Pulse width tP limited by Tjmax ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C nC VR = 800 V dif/dt = 2180 A/µs A Note 2 ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C nC VR = 800 V dif/dt = 1320 A/µs A Note 2 Symbol RθJC RθJC Parameter Thermal Resistance from Junction to Case Thermal Resistance from Junction to Ambient Typ. 0.24 Max. 0.33 40 Unit °C/W Test Conditions Note Fig. 21 3 C2M0025120D Rev. 5, 04-2021 Typical Performance Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 150 Conditions: Tj = -55 °C tp = < 200 µs VGS = 20V 120 VGS = 18V 90 60 30 VGS = 16V VGS = 14V VGS = 12V VGS = 10V Drain-Source Current, IDS (A) 150 Conditions: VGS = 20V Tj = 25 °C tp = < 200 µs VGS = 18V 120 VGS = 16V 90 60 30 VGS = 14V VGS = 12V VGS = 10V 0 0.0 2.5 5.0 7.5 10.0 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 °C 150 Conditions: Tj = 150 °C tp = < 200 µs .


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