Document
VDS
1200 V
C2M0025120D
Silicon Carbide Power MOSFET TM
C2M MOSFET Technology
ID @ 25˚C RDS(on)
63 A 25 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency • Reduced Cooling Requirements • Increased Power Density • Increased System Switching Frequency
Applications • Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Battery Chargers • Motor Drive • Pulsed Power Applications
Part Number C2M0025120D
Package TO-247-3
Marking C2M0025120
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VDSmax VGSmax VGSop
Drain - Source Voltage Gate - Source Voltage Gate - Source Voltage
ID
Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD
Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
1200 -10/+25 -5/+20
63 39
250
378 -55 to +150
V VGS = 0 V, ID = 100 μA V Absolute maximum values V Recommended operational values
VGS =20 V, TC = 25˚C A
VGS =20 V, TC = 100˚C A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
TL
Solder Temperature
Md
Mounting Torque
260
˚C 1.6mm (0.063”) from case for 10s
1 8.8
Nm lbf-in
M3 or 6-32 screw
Note (1): Die limits are 90A (25°C) and 60A (100°C)
Note
Fig. 19 Note 1 Fig. 22 Fig. 20
1
C2M0025120D Rev. 5, 04-2021
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage
1200
2.0
2.6
2.3
IDSS
Zero Gate Voltage Drain Current
2
IGSS
Gate-Source Leakage Current
25
RDS(on) Drain-Source On-State Resistance
41
gfs
Transconductance
24.6 24
Ciss
Input Capacitance
3140
Coss
Output Capacitance
224
Crss
Reverse Transfer Capacitance
9
Eoss
Coss Stored Energy
128
EON Turn-On Switching Energy (Body Diode)
2.18
EOFF Turn Off Switching Energy (Body Diode)
0.68
EON Turn-On Switching Energy (External SiC Diode)
1.14
EOFF Turn Off Switching Energy (External SiC Diode)
0.8
td(on)
Turn-On Delay Time
15
tr
Rise Time
58
td(off)
Turn-Off Delay Time
33
tf RG(int) Qgs Qgd
Qg
Fall Time Internal Gate Resistance Gate to Source Charge Gate to Drain Charge Total Gate Charge
17 1.0 46 71.5 194
Max.
4
100 250 34
Unit V V V μA nA
mΩ
S
Test Conditions VGS = 0 V, ID = 100 μA VDS = VGS, ID = 15mA VDS = VGS, ID = 15mA, TJ = 150 °C VDS = 1200 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V, ID = 50 A VGS = 20 V, ID = 50 A, TJ = 150 °C VDS= 20 V, IDS= 50 A VDS= 20 V, IDS= 50 A, TJ = 150 °C
VGS = 0 V pF VDS = 1000 V
f = 1 MHz μJ VAC = 25 mV
VDS = 800 V, VGS = -5/20 V, mJ ID = 50A, RG(ext) = 2.5Ω,L= 99 μH
FWD = Internal Body Diode of MOSFET
VDS = 800 V, VGS = -5/20 V, mJ ID = 50A, RG(ext) = 2.5Ω,L= 99 μH
FWD = External SiC Diode
VDD = 800 V, VGS = -5/20 V ID = 50 A, ns RG(ext) = 2.5 Ω, Inductive Load Timing relative to VDS Per IEC60747-8-4 pg 83
Ω f = 1 MHz, VAC = 25 mV, ESR of CISS
VDS = 800 V, VGS = -5/20 V nC ID = 50 A
Per IEC60747-8-4 pg 21
Note Fig. 11
Fig. 4,5,6 Fig. 7 Fig. 17,18 Fig 16 Fig. 25 Fig. 25
Fig. 27
Fig. 12
2
C2M0025120D Rev. 5, 04-2021
Reverse Diode Characteristics
Symbol Parameter
Typ. Max.
4.1
VSD
Diode Forward Voltage
3.5
IS
Continuous Diode Forward Current
63
IS, pulse
Diode Pulse Current
250
trr
Reverse Recovery Time
33
Qrr
Reverse Recovery Charge
487
Irrm
Peak Reverse Recovery Current
24
trr
Reverse Recovery Time
67
Qrr
Reverse Recovery Charge
386
Irrm
Peak Reverse Recovery Current
15
Note (2): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Unit
Test Conditions
Note
V
VGS = - 5 V, ISD = 25 A
V VGS = - 5 V, ISD = 25 A, TJ = 150 °C
VGS = - 5 V, TC= 25 °C
Fig. 8, 9, 10
Note 2
VGS = - 5 V, Pulse width tP limited by Tjmax
ns VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
nC VR = 800 V dif/dt = 2180 A/µs
A
Note 2
ns
VGS = - 5 V, ISD = 50 A ,TJ = 25 °C
nC VR = 800 V
dif/dt = 1320 A/µs
A
Note 2
Symbol RθJC RθJC
Parameter Thermal Resistance from Junction to Case Thermal Resistance from Junction to Ambient
Typ. 0.24
Max. 0.33 40
Unit °C/W
Test Conditions
Note Fig. 21
3
C2M0025120D Rev. 5, 04-2021
Typical Performance
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
150
Conditions:
Tj = -55 °C tp = < 200 µs
VGS = 20V
120
VGS = 18V
90
60
30
VGS = 16V
VGS = 14V VGS = 12V VGS = 10V
Drain-Source Current, IDS (A)
150
Conditions:
VGS = 20V
Tj = 25 °C tp = < 200 µs
VGS = 18V
120
VGS = 16V
90
60
30
VGS = 14V VGS = 12V
VGS = 10V
0 0.0
2.5
5.0
7.5
10.0
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 °C
150 Conditions: Tj = 150 °C tp = < 200 µs
.