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SDF02N65 Dataheets PDF



Part Number SDF02N65
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDF02N65 DatasheetSDF02N65 Datasheet (PDF)

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP02N65 SDF02N65 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 650V 2A 5.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP02N65HZ TO-220 Marking Code SDP02N65 Delivery Mode Tube RoHS Status Halogen Free SDP02N65PZ SDF02N65HZ SDF02N.

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP02N65 SDF02N65 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 650V 2A 5.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP02N65HZ TO-220 Marking Code SDP02N65 Delivery Mode Tube RoHS Status Halogen Free SDP02N65PZ SDF02N65HZ SDF02N65PZ TO-220 TO-220F TO-220F 02N65 SDF02N65 02N65 Tube Tube Tube Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP02N65 SDF02N65 VDS Drain-Source Voltage VGS Gate-Source Voltage 650 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 22 1.4 1.4 IDM -Pulsed a 5.9 5.9 EAS Single Pulse Avalanche Energy c 56 PD Maximum Power Dissipation TC=25°C TC=100°C 75 25 37.5 12.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 6 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=520V , VGS=0V VGS= ±30V , VDS=0V 650 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance DYNAMIC CHARACTERISTICS b CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance SWITCHING CHARACTERISTICS b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=20V , ID=1A VDS=25V,VGS=0V f=1.0MHz VDD=325V ID=1A VGS=10V RGEN= 6 ohm VDS=325V,ID=1A,VGS=10V VDS=325V,ID=1A, VGS=10V 2 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) Typ Max Units 1 ±100 V uA nA 34V 4.4 5.6 ohm 1.7 S 302 pF 37 pF 10 pF 15.2 ns 16.4 ns 17 ns 9.6 ns 5 nC 1.4 nC 2.2 nC 0.8 1.4 V Dec,24,2013 2 www.samhop.com.tw SDP02N65 SDF02N65 ID, Drain Current(A) 3.0 VGS =10V VGS =7V 2.4 VGS =6V 1.8 1.2 0.6 VGS =5V 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Figure 1. Output Characteristics ID, Drain Current(A) Ver 2.1 1.5 1.2 0.9 0.6 T j=125 C 0.3 25 C -55 C 0 0 1.2 2.4 3.6 4.8 6.0 7.2 VGS, Gate-to-Source Voltage(V) Figure 2. Transfer Characteristics RDS(on)(Ω) 12 10 8 6 V GS =10V 4 2 0 0.01 0..


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