Document
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP02N65
SDF02N65
Ver 2.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max
650V
2A
5.6 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP02N65HZ
TO-220
Marking Code SDP02N65
Delivery Mode Tube
RoHS Status Halogen Free
SDP02N65PZ SDF02N65HZ SDF02N65PZ
TO-220 TO-220F TO-220F
02N65 SDF02N65
02N65
Tube Tube Tube
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP02N65 SDF02N65
VDS Drain-Source Voltage VGS Gate-Source Voltage
650 ±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
22 1.4 1.4
IDM -Pulsed a
5.9 5.9
EAS Single Pulse Avalanche Energy c
56
PD
Maximum Power Dissipation
TC=25°C TC=100°C
75 25 37.5 12.5
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
2 6 °C/W 62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP02N65 SDF02N65
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=520V , VGS=0V VGS= ±30V , VDS=0V
650
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) gFS
Drain-Source On-State Resistance Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF) tf Qg Qgs Qgd
Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=20V , ID=1A
VDS=25V,VGS=0V f=1.0MHz
VDD=325V ID=1A VGS=10V RGEN= 6 ohm
VDS=325V,ID=1A,VGS=10V VDS=325V,ID=1A, VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ Max Units
1 ±100
V uA nA
34V 4.4 5.6 ohm 1.7 S
302 pF 37 pF 10 pF
15.2 ns 16.4 ns 17 ns 9.6 ns
5 nC 1.4 nC 2.2 nC
0.8 1.4
V
Dec,24,2013
2 www.samhop.com.tw
SDP02N65 SDF02N65
ID, Drain Current(A)
3.0
VGS =10V
VGS =7V
2.4 VGS =6V
1.8
1.2
0.6 VGS =5V
0 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
ID, Drain Current(A)
Ver 2.1
1.5
1.2
0.9
0.6 T j=125 C
0.3 25 C -55 C
0 0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
RDS(on)(Ω)
12
10
8
6 V GS =10V 4
2
0 0.01 0..