SDF04N65

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP04N65 SDF04N65 Ver 2.2 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 650V 4A 2.3 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP04N65HZ TO-220 SDP04N65PZ TO-220 SDF04N65HZ TO-220F SDF04N65PZ TO-220F Marking Code SDP04N65 04N65 SDF04N65 04N65 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP04N65 SDF04N65 VDS Drain-Source Voltage VGS Gate-Source Voltage 650 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 44 2.8 2.8 IDM -Pulsed a 12 12 EAS Single Pulse Avalanche Energy c 324 PD Maximum Power Dissipation TC=25°C TC=100°C 94 31 47 15.6 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 4.8 62.5 62.5 °C/W °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP04N65 SDF04N65 Ver 2.2 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gat...