SDF05N40T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
...
SDF05N40T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V 5A 2.4 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDF05N40PT
TO-220F
Marking Code 05N40T
Delivery Mode Tube
RoHS Status Pb Free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 400 ±30
5 4.2 15 24 75 52.5
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W 50 °C/W
Details are subject to change without notice.
1
Jan,27,2014
www.samhop.com.tw
SDF05N40T
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=320V , VGS=0V VGS= ±20V , VDS=0V
400 V 1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transco...
