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SDF05N50 Dataheets PDF



Part Number SDF05N50
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description N-Channel MOSFET
Datasheet SDF05N50 DatasheetSDF05N50 Datasheet (PDF)

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP05N50 SDF05N50 Ver 2.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 5A 1.35 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP05N50HZ TO-220 SDP05N50PZ TO-220 SDF05N50HZ TO-220F SDF05N50PZ TO-220F Marking Code SDP05N50 05N50 SDF05N50 .

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP05N50 SDF05N50 Ver 2.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 5A 1.35 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP05N50HZ TO-220 SDP05N50PZ TO-220 SDF05N50HZ TO-220F SDF05N50PZ TO-220F Marking Code SDP05N50 05N50 SDF05N50 05N50 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP05N50 SDF05N50 VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 5.0 5.0 3.5 3.5 IDM -Pulsed a 15 15 EAS Single Pulse Avalanche Energy c 40 PD Maximum Power Dissipation TC=25°C TC=100°C 83 28 42 14 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 5.4 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP05N50 SDF05N50 Ver 2.3 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±20V , VDS=0V 500 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=2.5A VDS=20V , ID=2.5A 2 DYNAMIC CHARACTERISTICS c CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=25V,VGS=0V f=1.0MHz SWITCHING CHARACTERISTICS c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD=250V ID=1A VGS=10V RGEN=25 ohm VDS=250V,ID=1A,VGS=10V VDS=250V,ID=1A, VGS=10V Typ 3 1.35 2.9 545 64 12 22 15.5 23 10 11 2.4 4.4 Max Units 1 ±100 V uA nA 4V 1.7 ohm S pF pF pF ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure12) 0.79 1.4 V Dec,24,2013 2 www.samhop.com.tw ID, Drain C urrent(A) SDP05N50 SDF05N50 10 VGS =10V 8 VGS =6V 6 4 VGS =5V 2 0 0 5 10 15 20 25 30 V DS , Drain-to-S ource Voltage (V ) F igure 1. Output C haracteris tics ID, Drain C urrent (A) Ver 2.3 5 4 T j=125 C 3 2 25 C 1 55 C 0 0 1.2 2.4 3.6 4.8 6.0 7.2 V G S , G ate-to-S ource Voltage (V ) F igure 2. Trans fer C haracteris tics R DS (on) ( )Ω 6 5 4 3 V GS =10V 2 1 0.1 1 2 4 6 8 10 ID, Drain C urrent (A) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage R DS (ON), On-R es is tance 3.0 2.6 V G S =10V 2.2 ID=2.5A 1.8 1.4 1.0 0 0 25 50 75 100 125 150 T j( C ) T j, J unction T emperature ( C ) F igure 4. On-R es is tance Variation with Drain C urrent and Temperature V th, Normalized G ate-S ource T hres hold V oltage 1.6 V DS =V G S 1.4 ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 3 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 6. B reakdown V oltage V ariation with T emperature Dec,24,2013 www.samhop.com.tw C , C apacitance (pF ) R DS (on) ( )Ω SDP05N50 SDF05N50 6 ID= 2.5A 5 4 125 C 3 75 C 2 25 C 1 0 0 2 4 6 8 10 V G S , G ate- S ource Voltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage 1200 1000 800 600 C is s 400 200 C oss C rss 0 0 10 20 30 40 50 V DS , Drain-to S ource Voltage (V ) F igure 9. C apacitance V GS , G ate to S ource V oltage (V ) Is, S ource-drain current (A) Ver 2.3 20 10 5 125 C 25 C 75 C 1 0 0.3 0.6 0.9 1.2 1.5 V S D, B ody Diode F orward V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 8 VDS =250V ID= 1A 6 4 2 0 0 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge ID, Drain C urrent (A) R DS(ON) Limit ID, Drain C urrent (A) R DS(ON) Limit 10 10 1 0 u1s 0 0 us1 ms1 0 ms DC 100us1ms10ms DC 11 0.1 0.03 0.1 VGS = 10V Single Pulse TC = 25 C 1 10 100 1000 0.1 0.03 0.1 VGS = 10V Single Pulse TC = 25 C 1 10 100 1000 V DS , Drain-S ource V oltage (V ) Figure 11a. Maximum Safe Operating Area for SDP05N50 V DS , Drain-S ource V oltage (V ) Figure 11a. Maximum Safe Operating Area for SDF05N50 Dec,24,2013 4 www.samhop.com.tw SDP05N50 SDF05N50 Ver 2.3 V( BR .


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