Document
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP05N50
SDF05N50
Ver 2.3
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V 5A 1.35 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP05N50HZ
TO-220
SDP05N50PZ
TO-220
SDF05N50HZ
TO-220F
SDF05N50PZ
TO-220F
Marking Code SDP05N50 05N50 SDF05N50 05N50
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP05N50 SDF05N50
VDS Drain-Source Voltage
500
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
5.0 5.0 3.5 3.5
IDM -Pulsed a
15 15
EAS Single Pulse Avalanche Energy c
40
PD
Maximum Power Dissipation
TC=25°C TC=100°C
83 28 42 14
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.8 5.4 °C/W 62.5 62.5 °C/W
Details are subject to change without notice.
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Dec,24,2013
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SDP05N50 SDF05N50
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±20V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=2.5A VDS=20V , ID=2.5A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=250V ID=1A VGS=10V RGEN=25 ohm
VDS=250V,ID=1A,VGS=10V
VDS=250V,ID=1A, VGS=10V
Typ
3 1.35 2.9
545 64 12
22 15.5 23 10 11 2.4 4.4
Max Units
1 ±100
V uA nA
4V 1.7 ohm
S
pF pF pF
ns ns ns ns nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure12)
0.79 1.4
V
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ID, Drain C urrent(A)
SDP05N50 SDF05N50
10 VGS =10V
8 VGS =6V
6
4 VGS =5V
2
0 0 5 10 15 20 25 30
V DS , Drain-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
ID, Drain C urrent (A)
Ver 2.3
5
4 T j=125 C
3
2 25 C
1
55 C
0 0 1.2 2.4 3.6 4.8 6.0 7.2
V G S , G ate-to-S ource Voltage (V )
F igure 2. Trans fer C haracteris tics
R DS (on) ( )Ω
6
5
4
3 V GS =10V
2
1
0.1 1 2 4 6 8 10
ID, Drain C urrent (A) F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
R DS (ON), On-R es is tance
3.0
2.6 V G S =10V
2.2 ID=2.5A
1.8
1.4
1.0
0 0 25 50 75 100 125 150 T j( C )
T j, J unction T emperature ( C )
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
V th, Normalized G ate-S ource T hres hold V oltage
1.6 V DS =V G S
1.4 ID=250uA 1.2 1.0 0.8 0.6 0.4 0.2
-50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
3
B V DS S , Normalized Drain-S ource B reakdown V oltage
1.15 ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation with T emperature
Dec,24,2013
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C , C apacitance (pF )
R DS (on) ( )Ω
SDP05N50 SDF05N50
6
ID= 2.5A
5
4 125 C
3 75 C
2 25 C
1
0 0 2 4 6 8 10
V G S , G ate- S ource Voltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
1200
1000
800
600 C is s
400
200 C oss C rss
0 0 10 20 30 40 50
V DS , Drain-to S ource Voltage (V )
F igure 9. C apacitance
V GS , G ate to S ource V oltage (V )
Is, S ource-drain current (A)
Ver 2.3
20 10
5
125 C
25 C
75 C
1 0 0.3 0.6 0.9 1.2 1.5
V S D, B ody Diode F orward V oltage (V )
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
10 8 VDS =250V
ID= 1A 6
4
2
0 0 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC )
F igure 10. G ate C harge
ID, Drain C urrent (A)
R DS(ON) Limit
ID, Drain C urrent (A)
R DS(ON) Limit
10 10
1 0 u1s 0 0 us1 ms1 0 ms DC
100us1ms10ms DC
11
0.1
0.03 0.1
VGS = 10V Single Pulse TC = 25 C
1 10
100 1000
0.1
0.03 0.1
VGS = 10V Single Pulse TC = 25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating Area for SDP05N50
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating Area for SDF05N50
Dec,24,2013
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SDP05N50 SDF05N50
Ver 2.3
V( BR .