SDF07N50T

SDF07N50T Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 7A 1.2 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220F Package. D GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDF07N50PT TO-220F Marking Code 07N50T Delivery Mode Tube RoHS Status Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a TC=25°C TC=100°C IDM -Pulsed a EAS Single Pulse Avalanche Energy c PD Maximum Power Dissipation TC=25°C TC=100°C TJ, TSTG Operating Junction and Storage Temperature Range Limit 500 ±30 7.0 4.9 20 225 31 16 -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 4.8 °C/W 62.5 °C/W Details are subject to change without notice. 1 Dec,31,2013 www.samhop.com.tw SDF07N50T Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current VGS=0V , ID=250uA VDS=400V , VGS=0V VGS= ±30V , VDS=0V 500 ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VDS=VGS , ID=250uA VG...